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  1. 29 Acta Physica Polonica A

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  1. 3 Jasiukiewicz C.

  2. 2 Błaszyk M.

  3. 2 Lehmann D.

  4. 2 Luciński T.

  5. 2 Oszwałdowski M.

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1
Content available remote

MIS-Microstructure with Periodic Field Electrodes. A New Type of Dynamic Superlattice

100%
Trale I. E.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 5
699-705
EN
The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure.
2
Content available remote

Phonon Induced Drag of Charge Carriers in Heterostructures in Magnetic Fields: Limit of Weak Fields

63%
Jasiukiewicz C., Lehmann D., Paszkiewicz T.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 4
829-832
EN
The response of a 2D gas of charge carriers of mobility μ in magnetic field B to pulsed phonon beams is considered. Previously we derived a quantum Langevin equation for the centre-of-mass of the carrier gas, which allows us to calculate the time integrated drag current. This formula is studied in the weak magnetic field limit. When the ratio of the cyclotron frequency ω_{c} to the frequency ω of phonons is small and μB ≪ 1, the general formula coincides with the corresponding expression obtained in the frame of the Boltzmann equation with the collision integral independent of B.
3
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SnTe Phase Transition in Strained Superlattices PbTe/SnTe

63%
Mironov O. A., Makarovskii O. N., Nashchekina O. N., Shpakovskaya L. P., Litvinov V. I., Oszwałdowski M., Berus T.
Acta Physica Polonica A
|
1995
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vol. 88
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issue 5
853-856
EN
An anomaly of the in-plane conductivity is observed in the superlattices PbTe/SnTe on (001)KCl in the temperature region of 60-130 K. The anomaly is caused by a structural phase transition in SnTe layer and as a result, the transition induced formation of defects. These defects are additional scattering centres which decrease the superlattice conductivity.
4
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Electrical Characterization of Semiconducting Polymers

63%
Stallinga P., Gomes H., Jones G., Taylor D.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 3
545-548
EN
Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.
5
Content available remote

Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

63%
Güllü Ö., Türüt A.
Acta Physica Polonica A
|
2015
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vol. 128
|
issue 3
383-388
EN
This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24×10^{13} eV^{-1} cm^{-2} to 5.56×10^{12} eV^{-1} cm^{-2}.
6
Content available remote

Magnetic Field Dependence of Phonon-Induced Drag Current of 2D Carriers

63%
Lehmann D., Jasiukiewicz C., Paszkiewicz T.
Acta Physica Polonica A
|
1997
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vol. 92
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issue 5
891-894
EN
The magnetic field dependence of the drag current induced by beams of acoustic phonons is studied in a 2D gas of carriers, formed in a heterostructure. This drag current is related to the velocity of the center of mass of the gas. The elimination of the degrees of freedom related to the relative motion of the carriers leads to a Langevin equation for the center-of-mass position vector. From this equation one can obtain an expression for the induced current density which depends on carrier density-density correlation functions. An explicit formula for the time-integrated current density is derived taking into account all intra and inter Landau level transitions. Corresponding numerical results are in good agreement with the experimental patterns.
7
Content available remote

Temperature Dependence of Spin Hall Effect in k-Cubed Rashba Model

51%
Krzyżewska A., Dyrdał A., Berakdar J.
Acta Physica Polonica A
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2018
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vol. 133
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issue 3
558-560
EN
Within the Matsubara Green function formalism and linear response theory we considered theoretically the temperature dependences of the spin Hall effect for a two-dimensional gas with an isotropic k-cubed form of the Rashba interaction. We utilize a standard model for treating spin-orbit phenomena in p-doped semiconductor heterostructures and also for an electron gas formed at perovskite oxides interfaces.
8
Publication available in full text mode
Content available

Introduction to Quantum Hall Effects

51%
Wysokiński K.
Acta Physica Polonica A
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2001
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vol. 100
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issue 3
287-299
EN
The quantum Hall effect is a set of phenomena observed at low temperature in a two-dimensional electron gas subject to a strong perpendicular magnetic field. It manifests itself as a quantization of the nondiagonal elements (ρ_{xy}) of the resistivity tensor accompanied by simultaneous vanishingρ_{xx} for ranges of the magnetic field. For the integer quantum Hall effectρ_{xy}= h/νe^2, where h is the Planck constant, e - charge of an electron andν is an integer, while for the fractional quantum Hall effectν is a simple fraction. In spite of similar phenomenology deep and profound differences exist between these two effects. In the lecture the precision of the Hall quantization in the integer quantum Hall effect and briefly new types of quantum fluids observed in the fractional quantum Hall effect are discussed. Some recent theoretical and experimental discoveries connected with quantum Hall liquids are also mentioned.
9
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Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

51%
Wolski S., Jasiukiewicz C., Dugaev V., Barnaś J., Slobodskyy T., Hansen W.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
472-474
EN
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
10
Content available remote

Rectification in Fullerene (C_{60})-Phthalocyanine Thin Film Sandwich Structures

51%
Anderson T., Akselrod L., Fischer C. M., Roth S.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 4-5
877-880
EN
Bilayer sandwich structures were fabricated by the sequential thermal evaporation of gold, copper phthalocyanine (CuPc), C_{60} and gold onto sap­phire substrates. When the current-voltage characteristics of a freshly made device are measured in an atmosphere of argon, fairly strong rectification is observed. When the bilayer device is exposed to ammonia vapor, the recti­fication slowly decreases and almost disappears. If the device is then placed under vacuum and the ammonia removed, the initial conditions slowly re­turn. We attribute the rectification to the formation of a p-n junction.
11
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Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

51%
Toroń B., Nowak M., Grabowski A., Kępińska M.
Acta Physica Polonica A
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2013
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vol. 124
|
issue 5
830-832
EN
The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.
12
Content available remote

Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties

51%
Lisauskas V., Butkutė R., Vengalis B., Šliužienė K., Tamulevicius S., Andrulevicius M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1055-1058
EN
We report preparation and investigation of p -n heterostructures based on Fe₃O₄ thin films grown on semiconductor Si and GaAs substrates. Fe₃O₄ films with thickness ranging from 60 to 300 nm were grown at 350÷450°C using dc magnetron sputtering technique. The measurement of X-ray diffraction and reflection high energy electron diffraction revealed polycrystalline microstructure of thin Fe₃O₄ films deposited on both Si and GaAs substrate. Investigation of surface composition by X-ray photoelectron spectroscopy showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II), and Fe(III). Transport measurements of Fe₃O₄/n-(Si, GaAs) heterostructures demonstrated nonlinear current-voltage (I -V) dependences in the temperature range from 300 K to 78 K.
13
Content available remote

Mapping of Copper Oxidation State Using High Pressure X-Ray Photoelectron Spectroscopy

51%
Kowalska J., Gopinath C.
Acta Physica Polonica A
|
2014
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vol. 125
|
issue 4
1065-1066
EN
The interaction of O_2 with polycrystalline foil of Cu, from ultra high vacuum to 1 mbar and up to 773 K has been investigated. The study were performed by using the high pressure X-ray photoelectron spectroscopy (electron spectroscopy for chemical analysis) ultraviolet photoelectron spectroscopy system. In this work the results of mapping copper oxidation states as a function of temperature at 1 mbar O_2 have been presented.
14
Content available remote

Landauer Conductance of Generalized Fibonacci-Type Semiconductor Superlattices

51%
Salejda W., Kubisa M., Misiewicz J., Ryczko K., Tyc M.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
514-518
EN
The quantum model of quasi-one-dimensional generalized Fibonacci semiconductor superlattice with the mass of charge carriers depending on the position in superlattice is formulated. The Landauer electrical conductance σ_{L} of generalized Fibonacci semiconductor superlattice is studied analytically and numerically. The dynamical maps allowing us to calculate σ_{L} of the studied systems are presented. It is shown that σ_{L} as a function of incident energy E of charge carriers oscillates strongly and exhibits the resonant character. We have verified numerically that σ_{L}(E) reaches its local maximum for energies E corresponding to energy eigenvalues of charges in superlattice.
15
Content available remote

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

51%
Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie, J., Beaumont B.
Acta Physica Polonica A
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2011
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vol. 119
|
issue 2
196-198
EN
We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
16
Content available remote

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

51%
Kucur B., Ahmetoglu M., Andreev I., Kunitsyna E., Mikhailova M., Yakovlev Y.
Acta Physica Polonica A
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2014
|
vol. 125
|
issue 2
411-413
EN
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
17
Content available remote

Electron-Electron Interaction Effects in Quantum Hall Regime of GaN/AlGaN Heterostructures

51%
Siekacz M., Dybko K., Maude D., Potemski M., Knap W., Skierbiszewski C.
Acta Physica Polonica A
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2007
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vol. 112
|
issue 2
269-273
EN
We measured the activation of resistivity at quantum Hall minima in high mobility two-dimensional electron gas confined at AlGaN/GaN interface. The effective g-factor and effective mass was deduced. The electron-electron interactions modify both quantities compared to their bare band values. It is found that the influence of interactions is much more pronounced onto g-factor than effective mass. The relative spin susceptibility was also calculated and compared with available theories. The best agreement was found with the ideal two-dimensional gas model in random phase approximation.
18
Publication available in full text mode
Content available

Resonance Tunneling in Ferromagnet-Triplet Superconductors Junctions

51%
Kowalewski L., Wojciechowski R., Wojtuś P.
Acta Physica Polonica A
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2007
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vol. 111
|
issue 5
683-691
EN
We discuss the tunneling conductance in a ferromagnet-insulator-triplet superconductor junction. We consider the superconducting order parameters with spin triplet pairing having nodes. The nodal structure of the order parameter has been recently confirmed experimentally in Sr_2RuO_4. In particular, we study how a mid-gap structure of the tunnelling conductance depends on the phase difference of the pairing potential as well as on the orientation of the interface.
19
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Photoemission Electronic Spectra οf CdTe/Pb_{0.95}Eu_{0.05}Te/CdTe

51%
Orlowski B., Dziawa P., Gas K., Reszka A., Mickievicius S., Thiess S., Drube W.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
960-963
EN
The synchrotron radiation was used to apply tunable high energy X-ray photoemission spectroscopy for investigation of electronic structure of semiconductor nanostructure CdTe/Pb_{0.95}Eu_{0.05}Te/CdTe/GaAs(001) top part. The Pb_{0.95}Eu_{0.05}Te (6 nm thick) was buried under thin (22 nm) top layer of CdTe transparent for part of electrons photoemitted from Pb_{0.95}Eu_{0.05}Te buried layer. The top layer of CdTe was sputtered by Ar ion bombardment for surface cleaning and for leaving the thickness of CdTe more transparent for photoelectrons emitted from buried layer. For these thickness of the top layer the photoemission energy distribution curves corresponding to the valence band and core levels electrons of the buried layer atoms were measured with application of synchrotron radiation of energy hν = 3510 eV. The measured spectra corresponding to the buried layer atoms were observed in the valence band region and in the high binding energy region for core levels of Pb 4f, Pb 3d. The valence band contribution and core levels Cd 4d and Cd 3d were obtained mainly from top cover layer. Measured Te 4d, Te 3d and Te 4d spectra possess contribution as well from top cover layer as from the buried layer. The amount of Eu atoms was to small to be reasonable detected and presented in the paper.
20
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Oblique Reflection of Electrons from a Potential Barrier in Heterostructures

51%
Pfeffer P., Zawadzki W.
Acta Physica Polonica A
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2014
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vol. 126
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issue 3
820-827
EN
Reflection of electrons from a potential barrier in heterostructures is described. An electric field of the barrier causes spin splitting of electron energies via the spin-orbit interaction and its form is calculated in the three-level k·p model for a nontrivial case of unbound electrons. It is shown that if the potential barrier is the only source of the spin-orbit interaction, the spin-flip electron reflections are not possible. However, there appear two unexpected possibilities related to the spin-orbit interaction: (a) non-attenuated electron propagation in the barrier whose height exceeds the energies of incoming electrons, (b) total reflection of electrons whose energies exceed barrier's height. It is indicated that the system can serve as a source of spin-polarized electron beams.
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