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Publisher
Institute of Physics, Polish Academy of Sciences
Journal
Acta Physica Polonica A
Year
1996
Volume
90
Issue
4
Identifiers
Cover
Volume contents
4
article:
Proceedings of the XXV International School on Physics of Semiconducting Compounds. Preface.
, p. 591-5946
article:
Luttinger Liquid as a New Metallic State of Correlated Fermions
(
Byczuk K.
,
Spałek J.
), p. 595-602
article:
Road to Quantum Boxes
(
Chang L.
), p. 603-612
article:
Iron-Boron Pair in Silicon: Old Problem Anew
(
Dobaczewski L.
,
Surma M.
), p. 613-622
article:
Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics
(
Jantsch W.
,
Przybylińska H.
), p. 623-633
article:
Doping and Characterization of Wide-Gap II-VI Epilayers
(
Karczewski G.
,
Wojtowicz T.
), p. 635-644
article:
Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface
(
Lavallard P.
), p. 645-666
article:
Tunneling in Semiconductor Nanostructures: Physics and Devices
(
Lüth H.
), p. 667-679
article:
Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra
(
Stępniewski R.
,
Wysmołek A.
), p. 681-690
article:
Electron Transport in Submicron Wires of Semiconductors
(
Wróbel J.
), p. 691-701
article:
Magnetic Polaron Formation in Semimagnetic Semiconductor Heterostructures
(
Yakovlev D.
), p. 703-714
article:
Scattering of Excitons by Phonons in Quantum Wells
(
Bardyszewski W.
,
Prywata M.
), p. 715-718
article:
Metastable One- and Two-Electron donor States in GaAs and CdF_{2}
(
Bednarek S.
,
Adamowski J.
), p. 719-722
article:
Application of Generalized Pair Approximation to Diluted Magnetic Semiconductor Quantum Structures
(
Bednarski H.
,
Cisowski J.
,
Portal J.
), p. 723-726
article:
Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures
(
Belyaev A.
,
Vitusevich S.
,
Glavin B.
,
Konakova R.
,
Dobrowolski W.
,
Mąkosa A.
,
Kravchenko L.
,
Gornev E.
), p. 727-730
article:
Double Exchange in Mixed-Valency Diluted Magnetic Semiconductors
(
Blinowski J.
,
Kacman P.
), p. 731-734
article:
Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN
(
Boguslawski P.
,
Bernholc J.
), p. 735-738
article:
On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te
(
Borysiuk J.
,
Kozubowski J.
,
Słupiński T.
), p. 739-742
article:
Bound and Resonant States of Shallow Donors in Quantum Antidots
(
Buczko R.
,
Bassani F.
), p. 743-746
article:
Small Antiferromagnetic Clusters
(
Buczko R.
,
Wilamowski Z.
,
Jantsch W.
), p. 747-750
article:
Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
(
Bugajski M.
,
Regiński K.
,
Godlewski M.
,
Wesołowski M.
,
Holtz P.
,
Buyanov A.
,
Monemar B.
), p. 751-754
article:
Effect of Spin-Glass Phase Formation on Exciton Magnetic Polaron in (Cd,Mn)Te
(
Chudnovskiy A. L.
,
Rosenow B.
,
Oppermann R.
,
Yakovlev D.
,
Zehnder U.
,
Ossau W.
), p. 755-758
article:
Magnetotransport Study of MBE grown Pb_{1-x}Eu_{x}Se Epilayers
(
Dobrowolski W.
,
Grodzicka E.
,
Story T.
,
Lambrecht A.
,
Bottner H.
,
Tacke M.
), p. 759-762
article:
On GaN Crystallization by Ammonothermal Method
(
Dwiliński R.
,
Baranowski J.
,
Kamińska M.
,
Doradziński R.
,
Garczyński J.
,
Sierzputowski L.
), p. 763-766
article:
Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg
(
Ebel R.
,
Spahn W.
,
Ress H.
,
Albert D.
,
Schäfer H.
,
Ehinger M.
,
Faschinger W.
,
Landwehr G.
), p. 767-772
article:
Aharonov-Bohm Effect at Misfit Dislocations in GaAsSb/GaAs Heterostructures
(
Figielski T.
,
Wosiński T.
,
Mąkosa A.
,
Dobrowolski W.
,
Raczyńska J.
), p. 773-776
article:
Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures
(
Figielski T.
,
Wosiński T.
,
Mąkosa A.
), p. 777-780
article:
Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator
(
Figielski T.
,
Wosiński T.
,
Mąkosa A.
,
Dobrowolski W.
,
Vitusevich S.
,
Belyaev A.
), p. 781-784
article:
Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
(
Godlewski M.
,
Bergman J.
,
Monemar B.
,
Kurtz E.
,
Hommel D.
), p. 785-788
article:
Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si
(
Godlewski M.
,
Bergman J.
,
Monemar B.
,
Rossner U.
,
Barski A.
), p. 789-792
article:
Calculations of Native Defects in Cubic AlN
(
Gorczyca I.
,
Svane A.
,
Christensen N.
), p. 793-796
article:
Conductance Anomalies in Strained Quantum Wires: the Case of PbSe and PbTe
(
Grabecki G.
,
Wróbel J.
,
Dietl T.
,
Sawicki M.
,
Skośkiewicz T.
,
Papis E.
,
Kamińska E.
,
Piotrowska A.
,
Frank N.
,
Ueta Y.
,
Sprinholtz G.
,
Bauer G.
), p. 797-800
article:
Resonant State of 4f^{14/13} Yb Ion in Pb_{1-x}Ge_{x}Te
(
Grodzicka E.
,
Dobrowolski W.
,
Story T.
,
Slynko E.
,
Vygranenko Y. K.
,
Willekens M.
,
Swagten H.
,
de Jonge W.
), p. 801-804
article:
Cd_{1-x}Fe_{x}Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy
(
Guziewicz E.
,
Orłowski B.
,
Kowalski B.
,
Barrett N.
,
Martinotti D.
,
Guillot C.
,
Lacharme J.
,
Sebenne C.
), p. 805-808
article:
Magnetic Anisotropy of V^{++} in CdS
(
Herbich M.
,
Mac W.
,
Twardowski A.
,
Demianiuk M.
), p. 809-812
article:
Effects of the Spin-Dependent Potential fluctuations on Free Exciton Zeeman Splitting of Zn_{1-x}Mn_{x}Se
(
Herbich M.
,
Mac W.
,
Stachow A.
,
Twardowski A.
,
Tworzydło J.
,
Demianiuk M.
), p. 813-816
article:
Electronic Structure of Zinc-Blende Zn_{0.5}Co_{0.5}Se: Theoretical Study
(
Hołda A.
,
Markowski R.
,
Dębowska D.
,
Kisiel A.
,
Zimnal-Starnawska M.
,
Piacentini M.
,
Zema N.
,
Lama F.
), p. 817-820
article:
Influence of Magnetic Field on Blue Anti-Stokes Luminescence of ZnSe:Cr Crystals
(
Ivanov V.
,
Semenov Y. G.
,
Surma M.
,
Godlewski M.
), p. 821-824
article:
Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies
(
Jasiński J.
,
Liliental-Weber Z.
), p. 825-828
article:
Phonon Induced Drag of Charge Carriers in Heterostructures in Magnetic Fields: Limit of Weak Fields
(
Jasiukiewicz C.
,
Lehmann D.
,
Paszkiewicz T.
), p. 829-832
article:
Resonant Magnetotunneling in Double-Barrier Structures
(
Kaczmarek E.
), p. 833-836
article:
Optically Induced Gaps in Disordered Semiconductors
(
Kalvová A.
,
Velický B.
), p. 837-842
article:
Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces
(
Kamińska E.
,
Piotrowska A.
,
Kasjaniuk S.
,
Gierlotka S.
), p. 843-846
article:
Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
(
Kaniewska M.
,
Regiński K.
,
Muszalski J.
,
Kryńska D.
,
Litkowiec A.
,
Kaniewski J.
,
Wesołowski M.
,
Bugajski M.
), p. 847-850
article:
Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
(
Korona K.
,
Jasiński J.
,
Kurpiewski A.
,
Kamińska M.
,
Jagadish C.
,
Tan H.
,
Krotkus A.
,
Marcinkevicius S.
), p. 851-854
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