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Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods

100%
Rzodkiewicz W., Kulik M., Papis E., Szerling A.
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EN
Optical spectra analysis provides a wealth of information on physical properties of various semiconductor materials. Fractional derivative spectrum technique is especially interesting when the limitations of the standard treatment occur. In this paper we present the fractional derivative spectrum method for analysis of the optical spectra for both Si and GaAs. The significant changes in critical point parameters in each treated Si and GaAs samples in comparison to that before treatment have been observed. Our investigation illustrates that fractional derivative spectrum is a very good technique to extract basic information on relevant physical quantities from the observed optical spectra, and it has the advantages of flexibility, directness, and sensitivity, which give possibility to obtain the Van Hove singularities (critical point parameters) efficiently with one consent.
2
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Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

88%
Pluska M., Czerwinski A., Szerling A., Ratajczak J., Kątcki J.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
1027-1032
EN
Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.
3
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The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers

88%
Pruszyńska-Karbownik E., Karbownik P., Szerling A., Kosiel K., Bugajski M.
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EN
Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.
4
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Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current

88%
Pluska M., Czerwinski A., Ratajczak J., Szerling A., Kątcki J.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-86-S-88
EN
The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
5
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Molecular Beam Epitaxy Growth for Quantum Cascade Lasers

76%
Kosiel K., Szerling A., Kubacka-Traczyk J., Karbownik P., Pruszyńska-Karbownik E., Bugajski M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
806-813
EN
The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al_{0.45}Ga_{0.55}As heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si_{3}N_{4} for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
6
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Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology

76%
Szerling A., Karbownik P., Kosiel K., Kubacka-Traczyk J., Pruszyńska-Karbownik E., Płuska M., Bugajski M.
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EN
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/Al_{0.45}Ga_{0.55}As laser without anti-reflection/high-reflection coatings.
7
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Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection

76%
Kozič A., Paškevič Č., Sužiedėlis A., Gradauskas J., Ašmontas S., Szerling A., Wrzesińska H.
Acta Physica Polonica A
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2006
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vol. 110
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issue 6
845-849
EN
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
8
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GaAs/AlGaAs (~9.4 μm) quantum cascade lasers operating at 260 K

64%
Kosiel K., Bugajski M., Szerling A., Kubacka-Traczyk J., Sankowska I., Karbownik P., Trajnerowicz A., Karbownik E., Pierściński K., Pierścińska D.
Bulletin of the Polish Academy of Sciences: Technical Sciences
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2010
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issue 4
9
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High power QW SCH InGaAs/GaAs lasers for 980-nm band

52%
Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kosiel K., Zbroszczyk M., Ochalski T., Piwoński T., Wawer D., Szerling A., Kowalczyk E., Wrzesińska H., Górska M.
Bulletin of the Polish Academy of Sciences: Technical Sciences
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2005
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vol. 53
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issue 2
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