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Dependence of Tin Whisker Growth on Copper and Oxygen Content on the Surface of Tin-Rich Lead Free Alloys

100%
Skwarek A., Witek K., Pluska M., Czerwinski A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 2
430-431
EN
The introduction of lead-free technology into electronics has intensified concern over tin whiskers phenomenon. Tin whiskers are crystals growing from the alloy surface as the result of compressive stress relaxation. This paper presents the dependence of tin whisker growth on copper and oxygen surface content. The observations and measurements were done using scanning electron microscopy with energy-dispersive X-ray spectroscopy. The results show that whisker growth is strongly related to increased copper and oxygen surface content in whisker neighborhood.
2
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Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

88%
Pluska M., Czerwinski A., Szerling A., Ratajczak J., Kątcki J.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
1027-1032
EN
Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.
3
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Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current

88%
Pluska M., Czerwinski A., Ratajczak J., Szerling A., Kątcki J.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-86-S-88
EN
The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
4
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TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

64%
Ratajczak J., Łaszcz A., Czerwinski A., Kątcki J., Tang X., Reckinger N., Yarekha D., Larrieu G., Dubois E.
Acta Physica Polonica A
|
2009
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vol. 116
|
issue S
S-89-S-91
EN
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
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