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Dynistor Switches for Micro- and Nanosecond Power Pulse Generators

100%
Aristov Y., Grekhov I., Korotkov S., Lyublinsky A.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1031-1033
EN
Gigawatt power switches for microsecond range applications based on an assembly of Reverse Switch-on Dynistors (RSD) and fast compact generators for nanosecond range applications based on new semiconductor devices Deep Level Dynistors (DLD) are discussed. As an example design and operation principles of 25 kV, 300 kA, 600 μs pulse duration power switch based on 76 mm diameter RSDs and 25 kV, 10 kA switch based on 16 mm diameter DLDs are described. It is possible to increase the pulse power by increasing both diameter of dynistor structure and number of devices connected in series or in parallel.
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Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

88%
Argunova T., Je J., Kostina L., Rozhkov A., Grekhov I.
Acta Physica Polonica A
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2013
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vol. 124
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issue 2
239-243
EN
Defects in Si_{1-x}Ge_{x} single crystals (2-8.5 at.% Ge) grown by the Czochralski method are investigated by synchrotron white beam topography and phase contrast imaging techniques. As the Ge concentration increases, dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρ_{v}, the Hall hole mobility μ_{p} and carrier lifetime τ_{e}. Diodes are fabricated by bonding p-Si_{1-x}Ge_{x} to n-Si wafers to investigate I-V characteristics and reverse recovery process. I-V characteristics are not deteriorated in spite of a five times decrease in τ_{e} with Ge concentration. A small reverse recovery time (determined by the accumulated charge) can be achieved for an optimised preset Ge concentration.
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