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1

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

100%

Boratyński B., Paszkiewicz B., Paszkiewicz R., Tłaczała M.

Acta Physica Polonica A

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2009

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vol. 116

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issue 5

800-805

EN

AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× 10^{12} cm^{-2} and mobility of 1600 cm^{2}/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.

2

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

76%

Jezierski K., Sitarek P., Misiewicz J., Panek M., Ściana B., Korbutowicz R., Tłaczała M.

Acta Physica Polonica A

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1995

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vol. 88

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issue 4

751-754

EN

Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

3

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

76%

Prażmowska J., Korbutowicz R., Wośko M., Paszkiewicz R., Kovač J., Srnanek R., Tłaczała M.

Acta Physica Polonica A

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2009

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vol. 116

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issue S

S-123-S-125

EN

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

4

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

64%

Boratyński B., Korbutowicz R., Paszkiewicz B., Paszkiewicz R., Pucicki D., Radziewicz D., Ściana B., Tłaczała M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2004

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vol. 52

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issue 4

5

Polarity Related Problems in Growth of GaN Homoepitaxial Layers

52%

Leszczyński M., Prystawko P., Śliwinski A., Suski T., Litwin-Staszewska E., Porowski S., Paszkiewicz R., Tłaczała M., Beaumont B., Gibart P., Barski A., Langer R., Knap W., Frayssinet E.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

427-430

EN

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.

Refine search results

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

Polarity Related Problems in Growth of GaN Homoepitaxial Layers