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Cavity-Polariton Effects in II-VI Microcavities

100%

André R., Boeuf F., Heger D., Dang L., Romestain R., Bleuse J., Müller M.

Acta Physica Polonica A

1999

vol. 96

issue 5

511-524

Semiconductor microcavities are monolithic multilayer heterostructures grown by molecular beam epitaxy. They allow the confinement along the growth axis of both photons between the Bragg reflectors and excitons in quantum wells. If the exciton-photon coupling matrix element is large enough compared to the line width, the system is said to be in the strong coupling regime. In that case a quantum well exciton couples to another discrete state: the photon mode of a planar microcavity with the same in-plane wave vector, to give rise to quasi-stationary states named cavity polaritons. In this regime, the Fermi golden rule does not hold any more and the optical properties, linear or nonlinear, are strongly related to polariton features. A review of the optical properties of CdTe-based microcavities operating in the strong coupling regime is given in this paper. The strength of the exciton-photon coupling, dynamic optical properties, and relaxation processes along polariton dispersion curves will be discussed, as well as stimulated emission of cavity polariton luminescence.

III-Nitride Nanostructures for Infrared Optoelectronics

68%

Monroy E., Guillot F., Leconte S., Bellet-Amalric E., Nevou L., Doyennette L., Tchernycheva M., Julien F., Baumann E., Giorgetta F., Hofstetter D., Dang L.

Acta Physica Polonica A

2006

vol. 110

issue 3

295-301

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.

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2 Acta Physica Polonica A

1 2006

1 1999

2 Dang L.

1 André R.

1 Baumann E.

1 Bellet-Amalric E.

1 Bleuse J.

1 Boeuf F.

1 Doyennette L.

1 Giorgetta F.

1 Guillot F.

1 Heger D.

1 Hofstetter D.

1 Julien F.

1 Leconte S.

1 Monroy E.

1 Müller M.

1 Nevou L.

1 Romestain R.

1 Tchernycheva M.

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Cavity-Polariton Effects in II-VI Microcavities

III-Nitride Nanostructures for Infrared Optoelectronics