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Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

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Belyaev A., Vitusevich S., Glavin B., Konakova R., Dobrowolski W., Mąkosa A., Kravchenko L., Gornev E.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
727-730
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
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