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  1. 40 Kamińska M.

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1
Publication available in full text mode
Content available

Study on Non-Metallic Inclusions in Laser-Welded TRIP-Aided Nb-Microalloyed Steel

100%
Grajcar A., Różański M., Kamińska M., Grzegorczyk B.
Archives of Metallurgy and Materials
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2014
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issue 3
2
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Antisites Defects in GaP

100%
Jasiński J., Kamińska M., Palczewska M., Jurkiewicz-Wagner P.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 3
579-582
EN
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP_{4} or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
3
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Deep Defects in Low-Temperature GaAs

100%
Korona K., Muszalski J., Kamińska M., Weber E.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
821-824
EN
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
4
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Model of Hopping between Deep Centers in Low Temperature GaAs

100%
Korona K., Kamińska M., Baranowski J.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
337-340
EN
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
5
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Photo-ESR and Absorption Studies of Antisite Defects in GaP

100%
Palczewska M., Jasiński J., Kamińska M.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
461-464
EN
Photo-ESR and optical absorption measurements were done on annealed neutron irradiated GaP crystals. The position of paramagnetic gallium anti-site level in GaP energy gap has been determined. Additionally, the position of paramagnetic phosphorus antisite level, earlier determined in the paper of Kruger and Alexander, has been confirmed. Moreover, unusual in ESR experiments temperature dependence of phosphorus antisite amplitude in neutron irradiated GaP crystals has been explained.
6
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Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC

100%
Wysmołek A., Baranowski J. M., Kamińska M.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
957-960
EN
We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
7
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Thermal Plasma Decomposition Of Nickel And Cobalt Compounds

88%
Kołacz D., Woch M., Lis M., Kamińska M., Staszewski M.
Archives of Metallurgy and Materials
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2015
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issue 2
8
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Nature of Donors in SiC

88%
Suchanek B., Dwiliński R., Kamińska M., Palczewska M., Vlaskina S.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
321-324
EN
6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.
9
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Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

88%
Suchanek B., Palczewska M., Pakuła K., Baranowski J., Kamińska M.
Acta Physica Polonica A
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1997
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vol. 92
|
issue 5
1001-1004
EN
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10^{17} cm^{-1} and mobility up to 500 cm^{2}/(V s) were achieved whereas hole concentration up to 7×10^{17} cm^{-3} and mobility about 16 cm^{2}/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g_{⊥}=1.9487 and g_{∥}=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
10
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Competition of Radiation Processes in 6H-SiC Observed by Luminescence

88%
Wysmołek A., Mroziński P., Dwiliński R., Vlaskina S., Kamińska M.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
437-440
EN
We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The mea­surements performed at a broad range of temperatures showed totally dif­ferent behaviour of photoluminescence intensity of both bands. The pre­sented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the con­duction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ioniza­tion of subsequent shallow donor levels.
11
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Fabrication And Properties Of Silver Based Multiwall Carbon Nanotube Composite Prepared By Spark Plasma Sintering Method

76%
Lis M., Wrona A., Mazur J., Dupont C., Kamińska M., Kopyto D., Kwarciński M.
Archives of Metallurgy and Materials
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2015
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issue 2
12
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Electrical and Optical Properties of Highly Non-stoichiometric GaAs

76%
Kurpiewski A., Korona K., Kamińska M., Palczewska M., Jagadish C., Williams J.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
518-522
EN
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorp­tion coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
13
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Time-Resolved Studies of Gallium Nitride Doped with Gadolinium

76%
Witek B., Wysmołek A., Kamińska M., Twardowski A., Potemski M., Boćkowski M., Grzegory I.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1425-1430
EN
Time-resolved photoluminescence experiments on high quality bulk GaN doped with Gd are presented. It was found that the decay time of Gd-related transitions observed for 4.2 K around 1.78 eV is of about 3 ms. Such a long decay time strongly supports the identification of this emission band as due to transitions between Gd³+(4f⁷) levels. The decay time measured for Gd-related transitions observed in the UV spectral range, close to the GaN band-gap, was found to be much faster than 1 μs. This suggests that these emission lines could hardly be correlated with internal transitions within Gd³+(4f⁷). Possible origin of the Gd-related UV luminescence is discussed.
14
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On GaN Crystallization by Ammonothermal Method

76%
Dwiliński R., Baranowski J., Kamińska M., Doradziński R., Garczyński J., Sierzputowski L.
Acta Physica Polonica A
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1996
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vol. 90
|
issue 4
763-766
EN
GaN crystals are grown using ammonothermal method at pressures below 5 kbar and temperatures below 550°C. In this method, GaN is synthesised from high purity metallic gallium. The main role in the low temperature GaN crystallization is played by the chemically active and dense ammonia and dissolved mineralizer. Morphology of the obtained crystals as well as solubility experiments prove that gallium nitride is dissolved and crystallised from solution. Physical properties of GaN crystals obtained using ammonothermal method depend on the growth conditions and the type of mineralizer. All GaN samples reveal very intensive photoluminescence, also at room temperature. The spectra of crystals grown with lithium compound mineralizer are shifted towards higher energies in comparison to crystals grown with potassium based mineralizer. At helium temperatures, phosphorescence is also observed.
15
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Some Optical and Epr Properties of Strain-Free GaN Crystals Obtained by Ammono Method

76%
Dwiliński R., Baranowski J. M., Kamińska M., Doradziński R., Garczyński J., Sierzputowski L., Palczewska M.
Acta Physica Polonica A
|
1997
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vol. 92
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issue 4
737-741
EN
AMMONO GaN is grown spontaneously from ammonia solution in form of regular, well shaped, few micrometer crystals. Photoluminescence spectra of these crystals are characterized by fixed positions of very narrow exciton lines (FWHM down to 1 meV), where free excitons A, B, C, resolved two donor bound excitons and acceptor bound exciton are visible. Fixed position of exciton lines is in contrast to small changes of line energies which have been always observed for epitaxial GaN layers because of strain present in them. Free electron concentration of AMMONO GaN is less than few times 10^{15} cm^{-3}, as estimated from EPR signal of shallow donor. The above-mentioned facts qualified these crystals as state of the art strain-free, model material for basic parameter measurements of GaN. In this work, results of PL and EPR measurements performed on AMMONO GaN crystals are presented and discussed.
16
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ESR Spectroscopy of Graphene with Adsorbed NaCl Particles

76%
Karpierz E., Drabińska A., Bożek R., Kaźmierczak P., Wysmołek A., Kamińska M., Strupiński W.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1187-1189
EN
Due to its peculiar properties graphene is a good candidate for sensor materials. Therefore, it is important to study influence of different fluids on graphene layer. The presented studies showed pinning of NaCl microcrystals to graphene surface after immersing graphene in NaCl solution and subsequent careful rinsing with distilled water. The atomic force microscopy images revealed presence of many NaCl-related structures over 100 nm high on graphene surface. The electron spin resonance spectrum for magnetic field perpendicular to the graphene layer consisted of several lines originating from NaCl. The pinning of NaCl microcrystals resulted in increase of electron scattering, as confirmed by the Raman spectroscopy (the increase of intensity of D and D' bands) and weak localization measurement (the decrease of coherence length).
17
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Content available

Progress in Fabrication Technology of Silver-Based Contact Materials with Particular Account of the Ag-Re and Ag-SnO2Bi2O3 Composites

76%
Borkowski P., Księżarek S., Woch M., Kołacz D., Kamińska M., Walczuk E.
Archives of Metallurgy and Materials
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2014
|
issue 2
18
Publication available in full text mode
Content available

Photoluminescence Study of Bulk GaN Doped with Beryllium

76%
Jaworek M., Wysmołek A., Kamińska M., Twardowski A., Boćkowski M., Grzegory I.
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2005
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vol. 108
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issue 4
705-710
EN
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
19
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Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals

76%
Gosk J., Zając M., Kamińska M., Twardowski A., Grzegory I., Boć M., Porowski S.
Acta Physica Polonica A
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2003
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vol. 103
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issue 6
665-669
EN
Magnetic properties of bulk wurtzite n-type GaMnN and highly resistive GaMnN:Mg monocrystals were studied for the magnetic field applied parallel and perpendicular to the crystal hexagonal c-axis. Magnetization of both types of samples reveals paramagnetic behavior. However, for n-type GaMnN isotropic magnetization was observed which is in agreement with Mn d^5 configuration. On the other hand, GaMnN co-doped with Mg shows large magnetic anisotropy which suggests Mn to be in nonspherical d^4 or d^3 configuration.
20
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MnAs Nanocrystals Embedded in GaAs

76%
Kwiatkowski A., Wasik D., Kamińska M., Twardowski A., Dłużewski P., Borysiuk J., Sadowski J.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1207-1211
EN
Magnetic properties of MnAs nanocrystals embedded in GaAs are analyzed in the frame of phenomenological model proposed by Sasaki for ferritin superparamagnets. Our calculations explain qualitatively experimental data of magnetization versus temperature, obtained according to zero-field-cooled and field-cooled protocols. They show dynamics of magnetization of MnAs nanocrystals in range of temperature from 10 K to 320 K. There is transition from state in which very slow dynamics is observed (frozen state) to state in which dynamics is fast (quasi-superparamagnetic state).
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