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Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

100%
Grodzicki M., Wasielewski R., Surma S., Ciszewski A.
Acta Physica Polonica A
|
2009
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vol. 116
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issue S
S-82-S-85
EN
The surface of 6H-SiC(0001) samples was subjected to etching under H_{2}/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
2
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Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

76%
Sito J., Grodzicki M., Lament K., Wasielewski R., Mazur P., Ciszewski A.
Acta Physica Polonica A
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2017
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vol. 132
|
issue 2
357-360
EN
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
3
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Ru/GaN(0001) Interface Properties

76%
Wasielewski R., Grodzicki M., Sito J., Lament K., Mazur P., Ciszewski A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
354-357
EN
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
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