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Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

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Bąk-Misiuk J., Domagała J., Trela J., Leszczyński M., Misiuk A., Hartwig J., Prieur E.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
405-409
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
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Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

100%
Szuszkiewicz W., Gębicki W., Bąk-Misiuk J., Domagała J., Leszczyński M., Hartwig J.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
1003-1007
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
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