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Porous Silicon Formation by Metal-Assisted Chemical Etching

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Lipinski M., Cichoszewski J., Socha R., Piotrowski T.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-117-S-119
EN
The method of metal-assisted chemical etching produces a porous silicon layer. Palladium particles are deposited on both: multi-crystalline and Czochralski grown mono-crystalline Si wafers by immersing them in PdCl_{2} solution for 1 to 3 min. X-ray photoelectron spectroscopy analysis of Pd clusters shows a decrease in Pd metal fraction by prolonged immersion time t from F_{Pd} = 71.2% for t = 1 min to F_{Pd} = 61.4% for t = 3 min due to Pd oxidation process. Porous silicon forms by metal-assisted chemical etching in a HF:H_{2}O_{2} solution for 1 to 3 min. Photoluminescence of metal-assisted chemical etched samples exhibits the peak with a maximum of t at λ=650 nm independent of the etching time. Simultaneously, the intensity of the photoluminescence spectra strongly decreases for extended etching time t = 3 min. This behavior is attributed to increasing layer macroporosity, which strongly reduces amount of light emitting nanocrystallites.
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