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Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

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Korona K., Jasiński J., Kurpiewski A., Kamińska M., Jagadish C., Tan H., Krotkus A., Marcinkevicius S.

Acta Physica Polonica A

1996

vol. 90

issue 4

851-854

Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10^{14} to 5×10^{16} cm^{-2}. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.

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1 Acta Physica Polonica A

1 1996

1 Jagadish C.

1 Jasiński J.

1 Kamińska M.

1 Korona K.

1 Krotkus A.

1 Kurpiewski A.

1 Marcinkevicius S.

1 Tan H.

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Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs