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1

IV-VI Narrow-Gap Superlattices

100%

Sizov F.

Acta Physica Polonica A

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1991

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vol. 79

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issue 1

83-96

EN

Electronic structure, optical and electrical properties of IV-VI superlattices and multiple quantum wells (MQW) are discussed and compared with corresponding properties of IV-VI bulk semiconductors. In particular, the types of superlattice structure and MQW formed from various constituents are discussed.

2

Band-Offset and Electronic Properties of Type II PbTe/PbS Superlattices

51%

Sizov F., Gumenjuk-Sichevskaya J., Tetyorkin V., Zabudsky V.

Acta Physica Polonica A

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1995

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vol. 87

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issue 2

441-444

EN

Semimetallic conductivity was observed in PbTe/PbS SL obtained by a "hot wall" technique on (001) KCl substrates with (001) PbTe buffer layers. From the analysis of R_{H}(H) and p_{⊥}(H) dependencies by the Monte-Carlo fitting procedure the band offset ΔE_{v} = 0.32 ± 0.05 eV was obtained (T = 77 K) and it was proved that these SLs are type II "misaligned" structures. The calculations of the band structure of PbTe/PbS SLs showed that in such SLs a semimetal-semiconductor transition should occur for layer thicknesses of about 60÷70 Å.

3

Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures

39%

Savkina R., Smirnov A., Gudymenko A., Kladko V., Sizov F., Frigeri C.

Acta Physica Polonica A

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2014

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vol. 125

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issue 4

1003-1005

EN

The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg_{1-x}Cd_{x}Te (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B^{+} and Ag^{+}) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 10^3 Pa and 2.2 × 10^5 Pa, respectively). The structural properties of the Hg_{1-x}Cd_{x}Te epilayers were investigated using X-ray high-resolution reciprocal space mapping.

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3 Acta Physica Polonica A

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3 Sizov F.

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1 Gudymenko A.

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1 Kladko V.

1 Savkina R.

1 Smirnov A.

1 Tetyorkin V.

1 Zabudsky V.

IV-VI Narrow-Gap Superlattices

Band-Offset and Electronic Properties of Type II PbTe/PbS Superlattices

Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures