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Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator

100%
Figielski T., Wosiński T., Mąkosa A., Dobrowolski W., Vitusevich S., Belyaev A.
Acta Physica Polonica A
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1996
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vol. 90
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issue 4
781-784
EN
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
2
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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

100%
Vitusevich S., Figielski T., Mąkosa A., Wosiński T., Belyaev A., Konakova R., Kravchenko L.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
377-380
EN
For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
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Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

84%
Belyaev A., Vitusevich S., Glavin B., Konakova R., Dobrowolski W., Mąkosa A., Kravchenko L., Gornev E.
Acta Physica Polonica A
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1996
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vol. 90
|
issue 4
727-730
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
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