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X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

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Paszkowicz W., Górecka J., Domagała J., Dmitruk N., Varshava S. S., Härtwig J., Ohler M., Pietraszko A.

Acta Physica Polonica A

1997

vol. 91

issue 5

997-1002

GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.

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1 Acta Physica Polonica A

1 1997

1 Dmitruk N.

1 Domagała J.

1 Górecka J.

1 Härtwig J.

1 Ohler M.

1 Paszkowicz W.

1 Pietraszko A.

1 Varshava S. S.

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X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources