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1
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Crystallization of AlSi17Cu5Mg Alloy after Time-thermal Treatment

100%
Piątkowski J., Kamiński P.
Archives of Foundry Engineering
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2015
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issue 1
2
Publication available in full text mode
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Structure and Mechanical Properties of AlSiCuMg Alloy after Thermo Processing

100%
Piątkowski J., Kamiński P.
Archives of Foundry Engineering
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2015
|
issue 1
3
Publication available in full text mode
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Chosen Aspects of Quality Defects of ”Alphin” Inserts in Combustions Pistons

100%
Piątkowski J., Kamiński P.
Archives of Foundry Engineering
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2015
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issue 4
4
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Risk Assessment of Defect Occurrences in Engine Piston Castings by FMEA Method

100%
Piątkowski J., Kamiński P.
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issue 3
5
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Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms

81%
Kamiński P., Kozłowski R., Żelazko J.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
976-981
EN
High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×10^{14} cm^{-2}, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as V_3 (2-/-), V_2O (-/0), V_3 (-/0) and V_4 (-/0), respectively.
6
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Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

81%
Suproniuk M., Kamiński P., Kozłowski R., Pawłowski M.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
1042-1048
EN
A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the Z_{1/2} center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
7
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Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy

81%
Dobaczewski L., Kamiński P., Kozłowski R., Surma M.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
703-706
EN
High-resolution Laplace-transform deep level transient spectroscopy tech­nique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
8
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On Oscillating Carrier Dynamics in Highly Excited InP:Fe Crystals

81%
Subačius L., Kadys A., Jarašiūnas K., Kamiński P.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
855-858
EN
The numerical analysis and experimental data on time-resolved four-wave mixing confirmed a novel origin of oscillations in subnanosecond carrier dynamics in highly excited InP:Fe crystals. The effect was attributed to simultaneous presence of electron and hole gratings, which drift in the space charge field and contribute constructively or destructively to refractive index modulation in time domain.
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