We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd_{0.86}Fe_{0.14}Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd_{0.86}Fe_{0.14}Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.
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