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High-Pressure Diffraction Study of Ga_{1-x}Al_{x}As

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Paszkowicz W., Dynowska E., Żytkiewicz Z. R., Dobosz D., Otto J. W.

Acta Physica Polonica A

1997

vol. 91

issue 5

993-996

The Ga_{1-x}Al_{x}As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.

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1 Acta Physica Polonica A

1 1997

1 Dobosz D.

1 Dynowska E.

1 Otto J. W.

1 Paszkowicz W.

1 Żytkiewicz Z. R.

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High-Pressure Diffraction Study of Ga_{1-x}Al_{x}As