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Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

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Taishi T., Yonenaga I., Hoshikawa K.
Acta Physica Polonica A
|
2013
|
vol. 124
|
issue 2
231-234
EN
In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very difficult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B_2O_3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.
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