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Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

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Matsuura H., Morine T., Nagamachi S.

Acta Physica Polonica A

2014

vol. 125

issue 4

1017-1020

Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function that accounts for the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10^{19} cm^{-3} and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.

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1 Acta Physica Polonica A

1 2014

1 Matsuura H.

1 Morine T.

1 Nagamachi S.

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Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer