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EN
The inelastic mean free path of electrons (IMFP) is an important material parameter for description of electron transport processes in solids. This parameter is particularly useful for quantifying the electron spectroscopies, in particular Auger electron spectroscopy, X-ray photoelectron spectroscopy, electron energy loss spectroscopy and elastic peak electron spectroscopy. In this work, a brief overview of the IMFP determination is presented. Generally, there are two groups of methods to determine the IMFP: (i) calculations using the theoretical model based on the experimental optical data, and (ii) calculations using theory relating the IMFP and the measured probability elastic electron backscattering from solids. Major advances in the development of the second group of methods were made in three laboratories; these advances are reviewed here. The elastic backscattering probability, in absolute or relative units, can be conveniently evaluated from the elastic peak intensity. However, much effort is needed to develop the theory for calculating the IMFP, which typically involves the Monte Carlo simulations of electron trajectories in solids. Presently, this theory and typical procedures of the spectra processing are implemented in the software package EPESWIN developed by Jablonski. In recent years, much attention is devoted to the phenomenon of the electron energy losses in the surface region of solids. Reliability of the theory of elastic backscattering is distinctly improved if this effect is taken into account.
EN
Using the elastic peak electron spectroscopy (EPES), the transmission functions were determined for the 4-grid retarding field and the hemispherical analyzers, which are commonly used for surface physics experiments.
EN
In this work, the influence of recoil effect and surface excitations on the inelastic mean free paths for polythiophenes is investigated. The inelastic mean free paths of electrons in polythiophenes are measured with the elastic peak electron spectroscopy method using the Ag standard and the electron elastic scattering cross-sections from the database NIST 3.1 in the electron kinetic energy range 200-5000 eV. The Monte Carlo model is applied for evaluating the electron backscattering intensities from the polymers and the Ag standard, as well as for evaluating electrons quasi-elastically backscattered from atoms of different atomic numbers (the recoil effect). The surface excitation corrections are accounted for using the formalism of Chen, with the material parameters for polythiophenes evaluated from the elastic peak electron spectroscopy method. Deviations due to recoil effect and surface excitations to the inelastic mean free paths are compared and discussed. Correction to the inelastic mean free paths due to recoil effect is considerable but is smaller, however, than the correction due to surface excitations. Accounting for recoil effect and surface excitations leads to improvement of the inelastic mean free paths, as compared to the inelastic mean free paths resulting from the predictive formulae of Gries.
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