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Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.
EN
Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10^{14} to 5×10^{16} cm^{-2}. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
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