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On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

100%

Dussan A., Mesa F.

Acta Physica Polonica A

2014

vol. 125

issue 2

171-173

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu_3BiS_3, SnS, Cu_2ZnSnSe_4, and CuInGaSe_2 thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level (N_{F}), as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.

Growth Analysis and Numerical Simulation of Cu_3BiS_3 Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method

81%

Mesa F., Ballesteros V., Dussan A.

Acta Physica Polonica A

2014

vol. 125

issue 2

385-387

The properties and the efficiency of a semiconductor thin film depend on the state of stress and defects in the film structure. When the film is growing layer by layer, the elastic energy due to deformation stress between the substrate and the film is released partly due to the formation of dislocations in the critical thickness deformation. In this paper, we present a finite element analysis of the stress state in a thin film of Cu_3BiS_3 as a function of thickness and elastic energy release by nucleation of dislocations. Initially, we analyze the stress contours associated with the epitaxial growth and dislocation nucleation and then combine these two in order to study the effective potential energy state of the system. Finally, the tool wxAMPS is today an important application for simulation of solar cells with high reliability and an improved design over its analysis of microelectronic and photonic structures predecessor, incorporating physical principles concerning photovoltaic phenomena and uses a new method for solving algorithms, combining Newton and Gummel approaches, which provides greater stability and speed of computation.

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2 Acta Physica Polonica A

2 2014

2 Dussan A.

2 Mesa F.

1 Ballesteros V.

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On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

Growth Analysis and Numerical Simulation of Cu_3BiS_3 Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method