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Determination of the Analytical Relationship between Refractive Index and Density of SiO_{2} Layers

100%
Rzodkiewicz W., Panas A.
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EN
The main goal of the work was the elaboration of the analytical functional relationship between refractive index n and density ρ of SiO_{2} layers on silicon substrates. Such ρ (n) relationship will give possibility to determine elastic and non-elastic strains in SiO_{2} layers on silicon substrates. Ellipsometric measurements by using variable angle spectroscopic ellipsometer of J.A. Woollam Company allowed determination of thicknesses and refractive indexes of silica layers. Measured SiO_{2} masses and calculated volumes of the layers gave possibility to define the degree of densification of silicon dioxide layers on silicon substrates. The Hill approximation function curve turned out to be the best fitting. The obtained Hill curve shows saturation for the density of silicon dioxide equal to ca. 4.53 g/cm^{3}. This value corresponds to the value nearby the one of the crystalline polytypic silicon dioxide (stishovite). It seems to be physically established that degree of densification tends to the limiting value.
2
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Nuclear and Optical Analyses of MOS Devices

81%
Rzodkiewicz W., Kulik M., Panas A., Kobzev A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
851-853
EN
The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
3
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An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

61%
Kucharski K., Zagrajek P., Tomaszewski D., Panas A., Głuszko G., Marczewski J., Kopyt P.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1193-1195
EN
Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
4
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Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

61%
Zaborowski M., Grabiec P., Dobrowolski R., Panas A., Skwara K., Szmigiel D., Wzorek M.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-139-S-141
EN
Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several μm by means of photolithography equipment working with μm-scale design rules. Process details influencing a shape of the Si pattern have been discussed. SEM examinations have been presented.
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