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Antistatic Properties of Nanofilled Coatings

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Gornicka B., Mazur M., Sieradzka K., Prociow E., Lapinski M.
Acta Physica Polonica A
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2010
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vol. 117
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issue 5
869-872
EN
The results of antistatic and electrical properties investigations of nanofilled coatings have been presented. Antistatic performance of materials is essential not only due to safety and preventing of dust and dirt attraction but also effects on an electrical field distribution in the high voltage insulating systems. The polymer coating added with silver and silica nanoparticles were examined by charge decay measurements after corona charging. The charge decay times have varied appreciably between the nanofilled coatings while the volume and surface resistivity of the all tested coatings did not demonstrate meaningful differences. The polyester coating dissipated fairly better than polyesterimide because of its structure and permittivity. It was found that the ability of surface to drain charge away is the better for coatings with of silver nanoparticles whereas the coatings modified with nanosilica shows the poor antistatic properties; the times of charge decay were four order longer then that of unmodified coatings. Barrier properties of nanosilica may be adverse for charge decay.
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Properties of Nanocrystalline TiO_{2}:V Thin Films as a Transparent Semiconducting Oxides

100%
Sieradzka K., Domaradzki J., Prociow E., Mazur M., Lapinski M.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-33-S-35
EN
In this work the nanocrystalline TiO_{2} thin films doped with vanadium in amount of 19 at.% and 23 at.% prepared by magnetron sputtering method have been presented. The transmission measurements shows that V-doped TiO_{2} thin films were transparent in ca. 81% in the visible range of light spectrum. On the basis of electrical examinations it was found that fabricated TiO_2:V thin films are semiconductors at room temperature and have different type of electrical conduction depending on the amount of vanadium dopant applied.
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Thin Films Based on Nanocrystalline TiO_{2} for Transparent Electronics

100%
Prociow E., Sieradzka K., Domaradzki J., Kaczmarek D., Mazur M.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-72-S-74
EN
In this work, investigations of structural, optical and electrical properties of transparent oxide semiconductor thin films based on TiO_{2} doped with Eu, Pd and Tb, Pd have been presented. The transparent oxide semiconductor nanocrystalline thin films were prepared by magnetron sputtering process. It was shown that doping with selected elements results in semiconducting properties of prepared thin films of oxides with p-(TiO_{2}:(Tb, Pd)) or n-type (TiO_{2}:(Eu, Pd)) of electrical conduction.
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