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Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture

100%
Godlewski M., Guziewicz E., Gierałtowska S., Łuka G., Krajewski T., Wachnicki Ł., Kopalko K.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-19-S-21
EN
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator HfO_{2}. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
2
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ZnO by ALD - Advantages of the Material Grown at Low Temperature

84%
Guziewicz E., Godlewski M., Krajewski T., Wachnicki Ł., Łuka G., Paszkowicz W., Domagała J., Przeździecka E., Łusakowska E., Witkowski B.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
814-817
EN
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10^{16} cm^{-3} and high mobility (10-50 cm^{2}/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
3
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Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition

84%
Łuka G., Krajewski T., Szczerbakow A., Łusakowska E., Kopalko K., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M., Fidelus J.
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EN
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
4
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Structure Dependent Conductivity of Ultrathin ZnO Films

84%
Snigurenko D., Kopalko K., Krajewski T., Łuka G., Gierałtowska S., Witkowski B., Godlewski M., Dybko K., Paszkowicz W., Guziewicz E.
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EN
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
5
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Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

84%
Gierałtowska S., Sztenkiel D., Guziewicz E., Godlewski M., Łuka G., Witkowski B., Wachnicki Ł., Łusakowska E., Dietl T., Sawicki M.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
692-695
EN
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
6
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Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration

68%
Grzanka S., Łuka G., Krajewski T., Guziewicz E., Jachymek R., Purgal W., Wiśniewska R., Sarzyńska A., Bering-Staniszewska A., Godlewski M., Perlin P.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
672-674
EN
Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10^{17} cm^{-3}. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10^{20} cm^{-3}. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10^{-3} Ω cm^2. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
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