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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

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Vitusevich S., Figielski T., Mąkosa A., Wosiński T., Belyaev A., Konakova R., Kravchenko L.

Acta Physica Polonica A

1995

vol. 87

issue 2

377-380

For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage characteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

84%

Belyaev A., Vitusevich S., Glavin B., Konakova R., Dobrowolski W., Mąkosa A., Kravchenko L., Gornev E.

Acta Physica Polonica A

1996

vol. 90

issue 4

727-730

An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.

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2 Acta Physica Polonica A

1 1996

1 1995

2 Belyaev A.

2 Konakova R.

2 Kravchenko L.

2 Mąkosa A.

2 Vitusevich S.

1 Dobrowolski W.

1 Figielski T.

1 Glavin B.

1 Gornev E.

1 Wosiński T.

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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures