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1
Content available remote

Substrate Defects Filtration During Epitaxial Lateral Overgrowth of GaAs

100%
Żytkiewicz Z. R., Dobosz D.
|
EN
Results on the growth of GaAs on (001) GaAs substrates by the epitaxial lateral overgrowth technique are reported. We show that the ratio of normal to lateral growth rates in the epitaxial lateral overgrowth process can be controlled by the crystallographic orientation of the seeds and by Si adding to the melt. Experimental data showing that the dislocations threading from the substrate are efficiently filtered and cannot propagate to the epitaxial lateral overgrowth layers are presented. These findings prove that the epitaxial lateral overgrowth process is the powerful method to grow epilayers with low dislocation density on high dislocation density substrates.
2
Content available remote

Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

100%
Zytkiewicz Z. R., Dobosz D.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 5
965-968
EN
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.
3
Content available remote

Optical and Electrical Properties of Bulk GaSb and AlGaSb

81%
Kaczor P., Żytkiewicz Z. R., Dobosz D., Kaliński Ż.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
763-766
EN
Optical measurements of bulk GaSb:S reveal the structure of the lattice two phonon absorption and acceptor-valence band transitions. A sulphur re­lated local vibrational modes and several bands related to the optical transi­tions from the ground state of the acceptor level are observed. A comparison of transport and optical measurements for GaSb:Te and AlGaSb:Te shows that in the alloy it is easier to obtain high concentrations of the electrically active Te impurity.
4
Content available remote

High-Pressure Diffraction Study of Ga_{1-x}Al_{x}As

71%
Paszkowicz W., Dynowska E., Żytkiewicz Z. R., Dobosz D., Otto J. W.
Acta Physica Polonica A
|
1997
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vol. 91
|
issue 5
993-996
EN
The Ga_{1-x}Al_{x}As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.
5
Content available remote

Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

71%
Żytkiewicz Z. R., Domagała J., Bąk-Misiuk J., Dobosz D., Leszczyński M.
|
EN
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
6
Content available remote

Alloy Splitting of the Te-DX States in Al_{x}Ga_{1-x}As

71%
Ostermayer G., Jantsch W., Dobosz D., Żytkiewicz Z., Wilamowski Z.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
769-772
EN
We report investigations of the Hall effect and conductivity of Te doped Al_{x}Ga_{1-x}As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.
7
Content available remote

Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy

61%
Kaczor P., Ashwin M., Dobosz D., Żytkiewicz Z., Newman R., Dobaczewski L.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 5
865-868
EN
Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_{x}Ga_{1-x}As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_{Ga} donors, Si_{As} acceptors and Si_{Ga}-Si_{As} pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^{-1} are discussed in relation to possible perturbations of the lines from Si_{Ga} or Si_{As}. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
8
Content available remote

Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment

61%
Dobaczewski L., Kaczor P., Missous M., Żytkiewicz Z., Dobosz D., Peaker A.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
905-907
EN
A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
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