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Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN

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Boguslawski P., Bernholc J.

Acta Physica Polonica A

1996

vol. 90

issue 4

735-738

Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. C_{N} is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X_{cation}-X_{N} pairs is also discussed.

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1 Acta Physica Polonica A

1 1996

1 Bernholc J.

1 Boguslawski P.

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Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN