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Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

100%

Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.

Acta Physica Polonica A

1997

vol. 91

issue 5

987-991

The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.

X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

84%

Paszkowicz W., Górecka J., Domagała J., Dmitruk N., Varshava S. S., Härtwig J., Ohler M., Pietraszko A.

Acta Physica Polonica A

1997

vol. 91

issue 5

997-1002

GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

84%

Bąk-Misiuk J., Domagała J., Paszkowicz W., Trela J., Żytkiewicz Z. R., Leszczyński M., Regiński K., Muszalski J., Härtwig J., Ohler M.

Acta Physica Polonica A

1997

vol. 91

issue 5

911-917

The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.

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3 Acta Physica Polonica A

3 1997

3 Domagała J.

3 Härtwig J.

3 Ohler M.

2 Bąk-Misiuk J.

2 Paszkowicz W.

1 Dmitruk N.

1 Górecka J.

1 Leszczyński M.

1 Misiuk A.

1 Muszalski J.

1 Pietraszko A.

1 Prieur E.

1 Regiński K.

1 Surma B.

1 Trela J.

1 Varshava S. S.

1 Żytkiewicz Z. R.

Search results

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties