This paper presents the combustion synthesis and characterization of one-dimensional silicon carbide nanostructures (nanowires of 3C-SiC polytype with zincblend structure) by means of cathodoluminescence technique. Cathodoluminescence spectra of nano-SiC samples and, as a reference, of a commercially available SiC micropowder are compared. It is shown that the emission band at 1.97 eV which is slightly evidenced in the spectrum of the commercial SiC under 10 keV electron beam irradiation becomes the prevailing band in CL of the purified silicon carbide nanowires.
Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
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