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Defect Analysis of Pentacene Diode

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Stuchlíková L., Weis M., Juhász P., Kósa A., Harmatha L., Jakabovic J.

Acta Physica Polonica A

2014

vol. 125

issue 4

1038-1041

This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10^{-18} cm^2 at 0.34 eV, 3.1 × 10^{-17} cm^2 at 0.41 eV, and 2.9 × 10^{-15} cm^2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.

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1 Acta Physica Polonica A

1 2014

1 Harmatha L.

1 Jakabovic J.

1 Juhász P.

1 Kósa A.

1 Stuchlíková L.

1 Weis M.

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Defect Analysis of Pentacene Diode