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Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

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Godlewski M., Bergman J., Monemar B., Rossner U., Barski A.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
789-792
EN
Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
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