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1
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Substrate Defects Filtration During Epitaxial Lateral Overgrowth of GaAs

100%
Żytkiewicz Z. R., Dobosz D.
|
EN
Results on the growth of GaAs on (001) GaAs substrates by the epitaxial lateral overgrowth technique are reported. We show that the ratio of normal to lateral growth rates in the epitaxial lateral overgrowth process can be controlled by the crystallographic orientation of the seeds and by Si adding to the melt. Experimental data showing that the dislocations threading from the substrate are efficiently filtered and cannot propagate to the epitaxial lateral overgrowth layers are presented. These findings prove that the epitaxial lateral overgrowth process is the powerful method to grow epilayers with low dislocation density on high dislocation density substrates.
2
Content available remote

Optical and Electrical Properties of Bulk GaSb and AlGaSb

81%
Kaczor P., Żytkiewicz Z. R., Dobosz D., Kaliński Ż.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
763-766
EN
Optical measurements of bulk GaSb:S reveal the structure of the lattice two phonon absorption and acceptor-valence band transitions. A sulphur re­lated local vibrational modes and several bands related to the optical transi­tions from the ground state of the acceptor level are observed. A comparison of transport and optical measurements for GaSb:Te and AlGaSb:Te shows that in the alloy it is easier to obtain high concentrations of the electrically active Te impurity.
3
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New Local Vibrational Modes Related to Silicon in Bulk AlGaAs

81%
Kaczor P., Żytkiewicz Z. R., Dobaczewski L.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
759-762
EN
A silicon-related local vibrational mode absorption in AlGaAs is re­ported for the first time. It consists of six peaks grouped around 450 cm^{-1} which form a distinct pattern. We believe that the new local vibrational mode absorption is a fingerprint of a single defect. Among the discussed mi­croscopic structures the most plausible is a Si_{Ga}-Si_{As} pair complex with Si_{As} acceptor interacting with different Ga, Al nearest neighbour local environ­ments.
4
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High-Pressure Diffraction Study of Ga_{1-x}Al_{x}As

71%
Paszkowicz W., Dynowska E., Żytkiewicz Z. R., Dobosz D., Otto J. W.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
993-996
EN
The Ga_{1-x}Al_{x}As sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases.
5
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Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

71%
Żytkiewicz Z. R., Domagała J., Bąk-Misiuk J., Dobosz D., Leszczyński M.
|
EN
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
6
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Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

52%
Bąk-Misiuk J., Domagała J., Paszkowicz W., Trela J., Żytkiewicz Z. R., Leszczyński M., Regiński K., Muszalski J., Härtwig J., Ohler M.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 5
911-917
EN
The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
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