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Defect Analysis of Pentacene Diode

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EN
This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10^{-18} cm^2 at 0.34 eV, 3.1 × 10^{-17} cm^2 at 0.41 eV, and 2.9 × 10^{-15} cm^2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.
EN
We report on an incorporation of self-assembled templates of superparamagnetic Fe-O nanoparticles into tunnel magnetoresistance devices. We fabricated a multilayer stack composed of the following layer sequence: Cr/Au/Co/NP/Co/Cu on Si(100) substrate where NP stands for a self-assembled layer of nanoparticles deposited by the Langmuir-Blodgett technique. The X-ray reflectivity and grazing-incidence small angle X-ray scattering were employed to study the layers thicknesses and interface morphology in each preparation step. In particular, the grazing-incidence small angle X-ray scattering was measured before and after the nanoparticle incorporation as well as on the complete tunnel magnetoresistance stack. In this way, in-depth morphology profile during subsequent preparation steps was obtained. We demonstrate that X-ray analysis of the deposited tunnel magnetoresistance stack is essential for successful fabrication of novel hybrid devices consisting of self-assembled nanoparticles.
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