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  1. 74 Acta Physica Polonica A

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  1. 9 Figielski T.

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  3. 7 Wosiński T.

  4. 6 Kaczmarek E.

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1
Content available remote

Analysis of Resonant Tunneling for Parabolic Double Barrier Structure

100%
Kaczmarek E.
Acta Physica Polonica A
|
1998
|
vol. 94
|
issue 3
379-382
EN
In this paper the resonant tunneling through the double barrier structure with the parabolic quantum well is studied theoretically. The transmission coefficient for such a structure as a function of applied voltage and the current-voltage characteristics are calculated and compared with those for the double barrier structure with the rectangular quantum well. The conclusion is that the resonant tunneling through parabolic double barrier structure can be used as a method of determination of the conduction band offset of the barrier and the well materials.
2
Content available remote

Resonant Magnetotunneling in Double-Barrier Structures

100%
Kaczmarek E.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
833-836
EN
In this paper we consider the influence of "mass barrier" and elastic scattering processes on the shape of j(V) and j(B) characteristics. Two scattering mechanisms, i.e. Coulombic on ionized impurities and on potential fluctuations in double-barrier structures are considered. The "mass barrier" shifts the whole j(V) characteristic slightly towards lower voltage and makes the resonant energy E_{R} dependent on magnetic field. On the other hand, both considered scattering mechanisms change the shape of j(V) and j(B) characteristics by shifting the oscillation maxima towards lower applied voltage.
3
Content available remote

Analysis of Resonant Tunneling for CdTe-CdMgTe Structures

100%
Kaczmarek E.
Acta Physica Polonica A
|
1997
|
vol. 92
|
issue 4
801-804
EN
In this paper we present model calculations of the current-voltage characteristics for the CdTe/CdMgTe double barrier structures based on the assumption that the electron effective masses in the barrier and well regions of double barrier structure are different. The main features of the measured I-V characteristics, i.e., the small current peak at low bias and much larger peak at high voltage, are reproduced quite well by the calculated curve. The results of magnetotunneling experiments can be also understood in the frame of the proposed model.
4
Content available remote

Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures

100%
Kaczmarek E.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 4
755-758
EN
The existing theory of the resonant tunneling phenomena in double-bar­rier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmis­sion coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quan­tization of the energy spectrum in the accumulation well.
5
Content available remote

Electron-Optical Phonon Coupling in Double-Barrier Quantum Well Structure

63%
Kaczmarek E.
Acta Physica Polonica A
|
1995
|
vol. 87
|
issue 1
233-236
EN
The electron-LO phonon coupling constant for double-barrier quantum well structure was calculated using the Frohlich model of the electron-phonon interaction and assuming coupling of the confined electron with bulk LO phonon mode. Magnitude of the Huang-Rhys factor g and possibility of de­tecting of phonon replicas in the resonant tunneling current are discussed for GaAs-Al_{x}Ga_{1-x}As and CdTe based structures.
6
Content available remote

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

63%
Belyaev A., Vitusevich S., Glavin B., Konakova R., Dobrowolski W., Mąkosa A., Kravchenko L., Gornev E.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
727-730
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
7
Content available remote

Surface Investigation by Scanning Tunnelling Microscopy in Liquid Medium

63%
Phaner M., Robach Y., de Villeneuve C., Wojczuk S., Olejniczak W., Porte L.
Acta Physica Polonica A
|
1993
|
vol. 83
|
issue 5
611-619
EN
Scanning tunneling microscopy in liquid environment has gained an increased interest in recent years. The specific features of the in situ observation of surface structures at the solid/liquid interface are first presented. Next, a high resolution imaging of high oriented pyrolytic graphite (HOPG) graphite surface shows the potentiality of our home-made microscope. The last study, performed on technological InP. substrates, illustrates the extensive applications of in situ imaging in the fields of semiconductor technology.
8
Content available remote

Spin Torque in Double Planar Tunnel Junctions

63%
Wilczyński M., Świrkowicz R., Barnaś J.
Acta Physica Polonica A
|
2009
|
vol. 115
|
issue 1
269-271
EN
Transport in a double planar tunnel junction with ferromagnetic electrodes is analyzed theoretically in the zero-temperature limit. The in-plane and out-of-plane components of the spin torque exerted on magnetic moment of the central layer are determined as a function of the angle θ between magnetic moments of one of the external electrodes and of the central layer. Two configurations of the magnetic moments of external electrodes are considered, i.e. parallel and antiparallel ones. It is found that both torque components depend strongly on the thickness of the central layer, especially in junctions with a relatively thin central layer, where enhancement of the torque or a change of its sign can be observed for specific layer thicknesses. In junctions with thick central layer and in the limit of small bias voltage applied to the junction, the in-plane torque is generally smaller in the parallel configuration than in the antiparallel one. The opposite relation is observed for the normal torque.
9
Content available remote

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

63%
Diniz R., Smoliner J., Gornik E., Suski T., Meiners U., Brugger H.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
625-628
EN
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
10
Content available remote

Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

63%
Belyaev A., Eaves L., Main P., Polimeni A., Stoddart S., Henini M.
Acta Physica Polonica A
|
1998
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vol. 94
|
issue 2
245-249
EN
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.
11
Content available remote

Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator

63%
Figielski T., Wosiński T., Mąkosa A., Dobrowolski W., Vitusevich S., Belyaev A.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 4
781-784
EN
An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
12
Content available remote

Traversal Time through Double-Barrier Resonant Tunneling Structure

63%
Figielski T.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 3
587-589
EN
There are certain confusing statements in the literature concerning a physical time that is responsible for a high-frequency limit in operation of double-barrier resonant tunneling devices. Here, it is shown that an electron traversal time, introduced earlier by ours, exhibits no singularity on resonance and might be a good candidate for the quantity in question.
13
Content available remote

Coherent and Sequential Tunneling in High Magnetic Field

63%
Belyaev A. E., Vitusevich S. A., Maude D., Portal J. C.
Acta Physica Polonica A
|
1997
|
vol. 92
|
issue 4
704-708
EN
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
14
Content available remote

Spin Torque in Semiconductor Single Planar Tunnel Junctions

63%
Wilczyński M., Barnaś J., Świrkowicz R.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 1
35-38
EN
Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero- -temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle\thet a between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically.
15
Content available remote

Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements

63%
Przybytek J., Stankiewicz R., Gryglas-Borysiewicz M., Baj M., Cavanna A., Faini G.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
723-725
EN
During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
16
Content available remote

Magnetotunneling Experiments Using La_{0.7}Sr_{0.3}MnO_{3} Based Break Junctions

63%
Baszyński J., Toliński T.
Acta Physica Polonica A
|
2000
|
vol. 98
|
issue 5
567-570
EN
The La_{0.7}Sr_{0.3}MnO_{3} perovskite is a ferromagnetic half-metal with a strong spin polarization and high Curie temperature T_{C} (355K). We have shown that a combination of the break junction technique with the special properties of the La_{0.7}Sr_{0.3}MnO_{3} perovskite can lead to extremely high values of tunneling magnetoresistance ratio (> 10^{3}%) and high field sensitivity (30%/Oe). These results are obtained in magnetic fields below 1kOe and at room temperature.
17
Content available remote

Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

63%
Andreev V., Bondarenko G., Maslovsky V., Stolyarov A.
Acta Physica Polonica A
|
2014
|
vol. 125
|
issue 6
1371-1374
EN
The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric SiO_2-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the SiO_2 film and Si-SiO_2 interface.
18
Content available remote

Photon Assisted Tunneling in ZnSe-ZnTe Double Barrier Heterostructures

63%
Bała P.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 5
1002-1006
EN
The tunneling phenomena in double barrier heterostructures can be affected by various effects. In this paper the effect of the intense THz radiation on the electron dynamics in the double barrier heterostructure is investigated. For the low frequency radiation the shift in the energy scale of the resonant tunneling peak together with its broadening is observed. For the high radiation frequency the multipeak structure is obtained. The interaction with radiation quanta leads to sequential tunneling and the transmitted wave function consists of single separated wave packets.
19
Content available remote

On the Transmission Coefficient for the Double δ'-Function Potential

63%
Yanetka I.
Acta Physica Polonica A
|
2000
|
vol. 97
|
issue 6
1053-1060
EN
The unbound-state solution of the Schrödinger equation is examined for the potential that is defined as the sum of two δ'-functions of non-equal strengths. The analytical expression for the transmission coefficient is derived from the solution. The transmission coefficient has an absolute maximum at the zero wave number. Further, the transmission coefficient is shown to exhibit relative maxima and minima. Moreover, it is proved that the transmission coefficient in its relative maxima is larger and in its relative minima is smaller than the transmission coefficient for the corresponding single δ'-function potential.
20
Content available remote

Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

63%
Figielski T., Mąkosa A., Wosiński T., Harness P., Singer K.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
817-819
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
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