Search results

1

Growth and Structure of Buffer Layers for High Temperature Superconducting Films

100%

Fröhlich K., Rosová A., Machajdík D., Šouc J., Figueras A., Weiss F., Chenevier B., Snauwaert J.

Acta Physica Polonica A

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1997

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vol. 92

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issue 1

255-258

EN

We have studied thin CeO_{2} buffer layers prepared by aerosol MOCVD on (11̅02) Al_{2}O_{3} substrate at high deposition temperature, T_{d}= 900°C. A texture analysis by X-ray diffraction showed a high degree of epitaxial character of CeO_{2} films. A study of the microstructure by transmission electron microscopy revealed that the CeO_{2} films are in a relaxed state being composed of slightly misoriented blocks surrounded by dislocations. The films are smooth, giving mean square root values of the surface roughness measured by atomic force microscopy up to 1 nm.

2

Physique des Solides et Morphologie des Surfaces

63%

Rousseau J., Mathia T. G.

Acta Physica Polonica A

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1993

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vol. 83

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issue 5

535-550

EN

PHYSICS OF SOLIDS AND MORPHOLOGY OF SURFACES: The morphology of surfaces is now an important field of research because of its direct connection with the industrial activity like manufacturing and optimising of functional criteria through complicated interfacial phenomena. Presently, characterization of the surface morphology, via the profile metrology, is well modelled by a statistical description. The use of shape morphological parameters allows to identify features of the surface structures generated by the process techniques and the emergence of the different phases of the condensed matter. Starting from the solid state background knowledge, prediction of the surface morphology appears as a tedious way. However, progress in the science of the solids formation and industrial requirements promises the best future for the physicists in such a new technological activity. Philosophy and basic formalism of that approach is presented here.

3

Crystallography of Boundaries and Interfaces

63%

Neumann W.

Acta Physica Polonica A

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1996

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vol. 89

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issue 2

195-207

EN

The main crystallographic concepts of characterizing interface structures are treated and reviewed. It will be demonstrated in which way the approaches of interface crystallography can be used to analyse interface structures experimentally observed.

4

Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods

63%

Pełka J. B., Górecka J., Auleytner J., Domagała J., Bąk-Misiuk J.

Acta Physica Polonica A

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1997

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vol. 91

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issue 5

905-910

EN

The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10^{16} I cm^{-2} of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.

5

Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures

63%

Kozhukhov A., Konarski P., Herman M.

Acta Physica Polonica A

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1996

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vol. 90

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issue 5

869-874

EN

Depth profiling analysis of In_{x}Ga_{1-x}As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O_{2}^{+} ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In_{0.53}Ga_{0.47}As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.

6

Microstructure and Magnetic Properties of Magnetron-Sputtered [Fe/Pt]ₙ Multilayer Films

63%

Zhang Y., Yu W., Chen F., Liu M., Li H.

Acta Physica Polonica A

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2015

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vol. 128

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issue 3

326-330

EN

[Fe/Pt]ₙ multilayer films were prepared on thermally oxidized Si (100) substrates at 300°C using dc magnetron sputtering and annealed for different temperature ranging from 350 to 500°C. It is found that the as-deposited [Fe/Pt]ₙ multilayer films exhibit well-resolved periodic structures and low roughness of interface. The ordering degree of the annealed films decreases and their perpendicular magnetic anisotropy deteriorates with increasing the period number. Fe/Pt bilayer film annealed at 350°C shows (001) orientation and hard magnetic characteristic, the coercivity and perpendicular anisotropy enhance with increase of annealing temperature. In addition, the hard and soft magnetic phases are not fully magnetically coupled in the Fe/Pt film annealed at higher temperature.

7

Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

51%

Balevičius S., Stankevič V., Žurauskienė N., Šimkevičius Č., Paršeliūnas J., Cimmperman P., Abrutis A., Plaušinaitienė V.

Acta Physica Polonica A

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2005

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vol. 107

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issue 1

203-206

EN

The magnetoresistance anisotropy of ultrathin La_{0.83}Sr_{0.17}Mn O_3 films deposited on NdGaO_3 substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.

8

Surface State of Gd(0001) Films on W(110): Scanning Tunneling Spectroscopy Study

51%

Bode M., Pascal R., Getzlaff M., Wiesendanger R.

Acta Physica Polonica A

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1998

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vol. 93

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issue 2

273-280

EN

The surface electronic structure of Gd(0001)/W(110) has been studied by scanning tunneling spectroscopy in dependence of the coverage. An exchange split d_{z^{2}}-like surface state which is well known from photoemission experiments was already found for coverages as low as 2 ML. The exchange splitting was found to increase with increasing coverage up to the fourth ML. For higher coverages the electronic structure remains constant. We found spectra that are shifted by ≈ 25 meV, possibly due to stacking faults.

9

STM/AFM Observations of Co/Cu Magnetic Multilayers

51%

Aleszkiewicz M., Kalinowski R., Czajka R., Polewska W., Wawro A., Baczewski L. T., Raułuszkiewicz J.

Acta Physica Polonica A

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1997

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vol. 91

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issue 2

311-314

EN

UHV deposited magnetic Co/Cu multilayers were investigated by means of scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Surface of the sample i.e. upper covering layer in "plane" configuration and individual sublayers in "cross-section" configuration were investigated. A possibility of structure characterization of metallic multilayers by STM and AFM in the cross-section configuration is demonstrated.

10

Growth of Laser Ablated YBa_{2}Cu_{3}O_{7} Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

51%

Perrin A., Guilloux-Viry M., Castel X.

Acta Physica Polonica A

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1997

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vol. 92

|

issue 1

115-125

EN

The graphoepitaxial growth of c-axis YBa_{2}Cu_{3}O_{7} laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: ⟨100⟩ YBa_{2}Cu_{3}O_{7} ∥ ⟨100⟩ MgO, c_{⊥ 0} notation or ⟨110⟩ YBa_{2}Cu_{3}O_{7} ∥ ⟨100⟩ MgO, c_{⊥ 45} notation. The ratio of c_{⊥ 45}/c_{⊥ 0} in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channeling patterns and reflection high energy electron diffraction diagrams. The coexistence of c_{⊥ 0} and c_{⊥ 45} domains creates high angle grain boundaries. No degradation of T_{c}, residual resistance ratio (RRR) or ΔT_{c} is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (R_{S} at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susceptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then R_{S} are discussed.

11

Scanning Force Microscopy on Laser Ablated Silicon Nitride Films

51%

Vrînceanu C., Flueraru C., Dinescu M., Vasile E.

Acta Physica Polonica A

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1997

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vol. 91

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issue 5

1009-1014

EN

The following paper presents a study on laser-ablated silicon nitride films, obtained by the laser reactive ablation method. The aim of this paper is to investigate silicon nitride film surfaces, first by scanning electron microscopy and then, at a better resolution and a greater magnification, by the scanning (atomic) force microscopy technique.

12

MBE Growth and Characterization of Cubic MnTe(111) on BaF_{2} Substrates

51%

Janik E., Wojtowicz T., Dynowska E., Bąk-Misiuk J., Domagała J., Karczewski G., Kossut J.

Acta Physica Polonica A

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1995

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vol. 88

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issue 5

982-984

EN

We report on growth by molecular beam epitaxy of cubic MnTe(111) layers on BaF_{2} (111) substrates. Layers as thick as 0.2-1.0 μm were grown. Basic characterization by X-ray diffraction shows that the cubic crystal structure is deformed to orthorhombic symmetry.

13

Microstructure of the Pulsed Laser Deposited LaSrCuO Films

51%

Cieplak M., Abal'oshev A., Zaytseva I., Berkowski M., Guha S., Wu Q.

Acta Physica Polonica A

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2006

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vol. 109

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issue 4-5

573-576

EN

The X-ray diffraction and atomic force microscopy are used to examine the microstructure of La_{1.85}Sr_{0.15}CuO_4 films grown by pulsed laser deposition on LaSrAlO_4 substrates. The films grow with different degrees of built-in strain, ranging from a large compressive to a large tensile in-plain strain. The tensile strain cannot be attributed to a substrate-related strain. The possible origins of the tensile strain are discussed.

14

Crystallization of Amorphous Ribbon Observed by Means of Scanning Tunneling Microscope

51%

Witek A., Reich A., Raułuszkiewicz J., Zych W.

Acta Physica Polonica A

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1993

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vol. 83

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issue 4

463-467

EN

Surfaces of amorphous ribbon Fe70V10 B20 were observed by means of the scanning tunneling microscope before and after the annealing in vacuum. The topographic images of the air-side surfaces after annealing are similar in the x-y plane and different in the z-direction. From the scanning tunnelling microscope images some information on the crystallization of amorphous ribbons can be deduced.

15

Influence of Film Thickness on the Microstructure and Magnetic Properties of Finemetic Thin Films

51%

Dlugoš R., Sovák P., Balcerski J., Füzer J., Kollár P.

Acta Physica Polonica A

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2000

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vol. 97

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issue 3

447-450

EN

The aim of this work was to study the influence of film thickness on the structure and magnetic properties of finemetic thin films after annealing. Thin films with the various thickness (from 20 nm up to 700 nm) were prepared by DC sputtering method. The heat treatments of the films for further structural and magnetic observations were performed at the temperature range 300-500°C for 15 min in vacuum furnace. Structural observations were carried out by transmission electron microscopy. Coercivity was determined from hysteresis loops traced with fluxmeter and Kerr magnetooptical hysteresisgraph. All the experimental results confirm a different magnetic behaviour of the thin films according to their thickness.

16

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

51%

Pishdadian S., Shariati Ghaleno A.

Acta Physica Polonica A

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2013

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vol. 123

|

issue 4

741-745

EN

Thin films of MnO_2, Mn_2O_3, and Mn_3O_4 have been grown from single precursor solution by varying the post-annealing condition on the glass and corning substrate using a sol-gel technique. By annealing in air and at temperature between 600 and 800°C, cubic Mn_2O_3 films could be formed. The films were thermally annealed at different temperatures between 300 and 800C to create different crystalline structure. Even under the air-annealing condition, Zn doping results in a structural transformation from cubic Zn_{x}Mn_{2-x}O_3 to tetragonal Zn_{x}Mn_{3-x}O_4. X-ray diffraction, atomic force microscopy, and UV-visible spectra were used to characterize the effect of thermal annealing on the optical and structural properties of a Zn doped manganese oxide thin film. Optical properties of the Mn_2O_3 and Mn_3O_4 films have been investigated by pointwise unconditioned minimization approach.

17

Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy

51%

Szczerbakow A., Godlewski M., Dynowska E., Ivanov V., Świątek K., Goldys E., Phillips M.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

579-582

EN

In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.

18

Effect of the In-Plane Epitaxial Mismatch between the Substrate and the Film on the Properties of YBa_2Cu_3O_{7-δ} Films

51%

Abal'osheva I., Cieplak M., Adamus Z., Berkowski M., Domukhovski V., Aleszkiewicz M.

Acta Physica Polonica A

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2006

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vol. 109

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issue 4-5

549-554

EN

We study the effect of the in-plane epitaxial mismatch between the substrate and the film on the crystallographic structure and the transport properties of YBa_2Cu_3O_{7-δ} superconducting films of thicknesses ranging between 600 and 3000Å. The films are grown by pulsed laser deposition on the new type of single-crystalline substrates prepared by Czochralski method, with the chemical formula (SrAl_{0.5}Ta_{0.5}O_3)_{0.7}(CaAl_{0.5}Ta_{0.5}O_3)_{0 .1}(LaAlO_3)_{0.2}. We find that superconducting properties of the samples are excellent, and generally they improve with increasing of the film thickness as a result of improved structural ordering. We also investigate the influence of the film thickness on the behavior of the critical current densities.

19

Photoemission Study of the Initial Growth of Co on Ru(0001)

51%

Godowski P., Onsgaard J., Trzebiatowska-Gusowska M., Pater K., Li Z.

Acta Physica Polonica A

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2007

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vol. 111

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issue 2

263-271

EN

The growth process of cobalt on Ru(0001) was characterized by photoelectron spectroscopy excited by X-ray and synchrotron radiation. The binding energy position and intensity of the Co 2p_{3/2} and Ru 3d_{5/2} core levels as well as the shape and structure of the valence band spectra corresponding to the different stages of the deposition were investigated. An observed small positive binding energy shift is a consequence of an increase in the cobalt adatoms coordination number. The core-level shift between bulk and surface Ru atoms is determined as -360 meV. Upon adsorption of cobalt, the interface peak appears with a shift of -(70÷80) meV relative to the bulk one. On the basis of unchanged energy positions and widths of the Ru-derived features of the valence band spectra, a weak interaction between cobalt and substrate is suggested. The measured valence band could be reproduced by superimposing the spectra of the pure elements.

20

Investigation of the Morphological Structure of Thin Cobalt Films by AFM and TEM

51%

Szmaja W., Balcerski J., Kozłowski W., Grobelny J., Cichomski M.

Acta Physica Polonica A

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2008

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vol. 113

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issue 1

171-174

EN

Thin obalt films, 40 nm and 100 nm in thickness, were evaporated at an incidence angle of 45° in a vacuum of about 10^{-5} mbar, simultaneously on unheated glass substrates and NaCl crystals. The magnetic microstructure of these films was investigated in a previous paper. In the present paper, to obtain an insight into relation between the magnetic microstructure and the morphological structure, we studied the latter structure with atomic force microscopy and transmission electron microscopy. For the films 40 nm as well as 100 nm thick, the presence of contribution of the shape anisotropy (related to the geometric alignment of the grains of the film) to the magnetic anisotropy of the film was found. Nevertheless, for the films investigated, we could not detect crystallographic texture.

Refine search results

Growth and Structure of Buffer Layers for High Temperature Superconducting Films

Physique des Solides et Morphologie des Surfaces

Crystallography of Boundaries and Interfaces

Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods

Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures

Microstructure and Magnetic Properties of Magnetron-Sputtered [Fe/Pt]ₙ Multilayer Films

Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

Surface State of Gd(0001) Films on W(110): Scanning Tunneling Spectroscopy Study

STM/AFM Observations of Co/Cu Magnetic Multilayers

Growth of Laser Ablated YBa_{2}Cu_{3}O_{7} Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Scanning Force Microscopy on Laser Ablated Silicon Nitride Films

MBE Growth and Characterization of Cubic MnTe(111) on BaF_{2} Substrates

Microstructure of the Pulsed Laser Deposited LaSrCuO Films

Crystallization of Amorphous Ribbon Observed by Means of Scanning Tunneling Microscope

Influence of Film Thickness on the Microstructure and Magnetic Properties of Finemetic Thin Films

Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy

Effect of the In-Plane Epitaxial Mismatch between the Substrate and the Film on the Properties of YBa_2Cu_3O_{7-δ} Films

Photoemission Study of the Initial Growth of Co on Ru(0001)

Investigation of the Morphological Structure of Thin Cobalt Films by AFM and TEM