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1
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Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures

100%
Pelc M., Jaskólski W., Ayuela A., Chico L.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
777-780
EN
We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.
2
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Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

80%
Kato G., Tajima M., Okayama F., Tokumaru S., Sato R., Toyota H., Ogura A.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
1010-1012
EN
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of ^{16}O¯. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
3
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Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO_4

80%
Malinowska A., Lefeld-Sosnowska M., Wieteska K., Wierzchowski W., Pajączkowska A., Graeff W.
Acta Physica Polonica A
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2008
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vol. 114
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issue 2
433-438
EN
SrLaGaO_4 single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown SrLaGaO_4 crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in ⟨100⟩ direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in 100 lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling.
4
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Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

70%
Dong P., Ma X., Yang D.
Acta Physica Polonica A
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2014
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vol. 125
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issue 4
972-975
EN
The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.
5
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Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon

61%
Morawiec J.
Acta Physica Polonica A
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1994
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vol. 85
|
issue 5
819-824
EN
The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
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