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1
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Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne^{+} Ions

100%
Węgierek P., Billewicz P.
Acta Physica Polonica A
|
2013
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vol. 123
|
issue 5
948-951
EN
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne^{+} ions (D = 1.5 × 10^{14} cm^{-2}, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of T_{a} = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
2
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Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process

100%
Węgierek P., Billewicz P.
Acta Physica Polonica A
|
2015
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vol. 128
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issue 5
943-945
EN
Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
3
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Content available

The Influence of Magnetic Field on Annihilation of Positrons in Corroded Steel St-20

100%
Pietrzak R., Szatanik R., Jaworska A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 5
677-681
EN
The positron lifetime in steel St-20 were determined before and following corrosion in HCl vapors. The influence of external magnetic field and remanent magnetization state on the parameters of the positron lifetime spectrum in the steel were investigated. It was found that the presence of magnetic field causes a decrease in the intensity of the component connected with annihilation of positrons in the close-to-the-surface lattice defects.
4
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Positron Annihilation in Corroded Steels St20 and St3S

100%
Pietrzak R., Smiatek W., Szatanik R.
Acta Physica Polonica A
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2006
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vol. 110
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issue 5
667-676
EN
The paper deals with examining the lifetimes of positrons emitted from ^{22}Na source in corroded St20 and St3S steels. Influence of the method of defecting the sample surfaces on the spectrum of positron lifetimes was investigated. Influence of temperature of initial annealing of samples, plastic deformation, electrolytic hydrogenation and corrosion in HCl vapors on trapping positrons in the examined steels was also determined.
5
Content available remote

The Influence of a Magnetic Field on the Formation of Corrosion Defects in Selected Metals and Steels, Analysed Using Positron Annihilation Method

100%
Pietrzak R., Szatanik R.
Acta Physica Polonica A
|
2014
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vol. 125
|
issue 3
733-736
EN
The method of positron lifetime measurement was used to analyse the influence of a magnetic field on the kinetics of corrosion defect formation in near-surface layers of iron, titanium as well as S20 and S0H18N9 steel grades. The listed metals, which belong to ferro- and paramagnetic materials, have different sensitivity to corrosion. It was found that not only the presence of a magnetic field, but also its direction influence the dimensions and the concentration of defects formed during corrosion.
6
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Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon

100%
Kaczor P.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
861-864
EN
We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.
7
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Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies

100%
Jasiński J., Liliental-Weber Z.
Acta Physica Polonica A
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1996
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vol. 90
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issue 4
825-828
EN
2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.
8
Content available remote

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

100%
Prucnal S., Jiao F., Reichel D., Zhao K., Cornelius S., Turek M., Pyszniak K., Drozdziel A., Skorupa W., Helm M., Zhou S.
Acta Physica Polonica A
|
2014
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vol. 125
|
issue 6
1404-1408
EN
Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
9
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Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

100%
Auleytner J., Skorokhod M., Datsenko L., Khrupa V.
Acta Physica Polonica A
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1996
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vol. 90
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issue 3
541-546
EN
Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
10
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Magnetic Losses Evolution of Ferritic Fe-Si Steel Subjected to Temper Rolling at Elevated Temperature

100%
Petryshynets I., Kováč F., Falat L., Puchý V., Šebek M.
Acta Physica Polonica A
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2018
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vol. 133
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issue 4
1065-1068
EN
The effects of heat transport phenomena and deformation gradient through the sheet cross-section on the microstructure, texture and magnetic properties of non-oriented Fe-Si steel were investigated. In order to achieve desired conditions for the steel microstructural and textural parameters improvement, a temper rolling process at elevated temperature was examined in combination with subsequent short term annealing, employing fast heating rate in laboratory conditions. The experimental material was represented by conventional medium silicon, vacuum degassed non-oriented steel that was taken directly from industrial line after final annealing. Performed electron back scattered diffraction measurements revealed that the experimental steel, treated by our proposed thermomechanical treatment, was characterized by coarse-grained microstructure with enhanced intensity of rotating cube texture. The magnetic losses of experimental samples were measured in ac magnetic field with 50 Hz frequency on the toroid with external and internal diameters of 25 mm and 15 mm, respectively. These measurements with magnetic field intensity of 2500 A/m showed that the application of our suggested treatment led to clear power losses reduction of the investigated material from initial 9.9 W/kg to 6.4 W/kg, i.e. by more than 35%.
11
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Influence of Annealing on Optical Properties of ZnO Nanorods Obtained by the Microwave-Assisted Hydrothermal Process

100%
Materska P., Witkowski B., Godlewski M.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1202-1204
EN
Optical properties of ZnO nanorods (of different sizes, grown on two different substrates) are investigated. Nanorods were grown using microwave-assisted hydrothermal process on gallium nitride or silicon substrate. To initiate nanorods growth on a silicon substrate ZnO nucleation layer was used. ZnO nanoseeds were deposited by atomic layer deposition. For GaN substrate an epitaxial relation was observed. For both substrates nanorods show a hexagonal structure, expected for wurtzite ZnO. Results of nanorods annealing are discussed.
12
Content available remote

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

100%
Węgierek P., Billewicz P.
Acta Physica Polonica A
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2014
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vol. 125
|
issue 6
1392-1396
EN
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of Ne^{+} ions (D=1.5 × 10^{14} cm^{-2}, E=100 keV). On the basis of results obtained for samples annealed at the temperature T_{a}=598 K and measured at the testing temperature T_{p}=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
13
Content available remote

Investigation of the Solid-Liquid Phase Transition for SnIn Alloys by the Positron Annihilation Method

100%
Chabik S., Rudzińska W., Szuszkiewicz M., Szymański C.
Acta Physica Polonica A
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1993
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vol. 83
|
issue 3
261-265
EN
The monovacancy formation energy in Sn-17 wt.% In and Sn-32 wt.% In was determined on the basis of the temperature dependence of the peak counting rate for these alloys. A sudden increase in the counting rate was observed between solidus and liquidus temperature. This phenomenon is connected with the formation of large defects acting as positron traps.
14
Content available remote

Investigation, of Solid-Liquid Phase Transition for Sn-54wt%In Alloy by Positron Anihilation Spectroscopy

100%
Chabik S., Szuszkiewicza M., Rudzińska W.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 1
97-101
EN
The peak coincidence counting rate F(T) was measured for Sn-54wt%In alloy at the temperature range from room temperature to 400°C. It was observed that for both heating and cooling run, F(Τ) parameter changes in the liquid phase. These changes were related to disintegration of SnII microcrystals. From a simple trapping model the defect disintegration enthalpy, H_{1}, was calculated. For heating and cooling run, the value of H_{1} was 0.53 ± 0.03 eV and 0.67 ± 0.07 eV, respectively. For well-annealed and cold rolled samples we find only one component, equal 200 ps, in the lifetime spectrum.
15
Content available remote

Positron Annihilation in Solid and Liquid Bi_{40}Sn_{60} Alloy

100%
Chabik S., Rudzińska W., Szuszkiewicz M., Szymański C.
Acta Physica Polonica A
|
1999
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vol. 95
|
issue 4
479-482
EN
The peak counting rate, F(T), for Bi_{40}Sn_{60} alloy in the temperature range from room temperature to 400°C was measured in three consecutive heating-cooling runs. Significant changes in F(T) were observed in the temperature interval between the solidus and liquidus temperature. The magnitude of these anomalies systematically diminishes in consecutive heating-cooling runs. Noticeable changes of values of F(T) parameter in the liquid alloy were observed, too. These effects were connected with trapping of positrons at the grain boundaries-defects and in the short-range ordered regions in the liquid alloy. Also microscopic structure of sample before and after measurements cycles was observed.
16
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Improved Processing Technique for Preparation of Non-Oriented Electrical Steels with Low Coercivity

100%
Petryshynets I., Kovac F., Marcin J., Škorvanek I.
Acta Physica Polonica A
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2014
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vol. 126
|
issue 1
182-183
EN
In order to improve soft magnetic properties of vacuum degassed NO steels, an adjusted temper rolling process for development of particular textures {100}<0vw> was used. The main idea here relies on a deformation-induced grain growth, which promotes preferable formation of the grains with desired orientation. Two vacuum degassed NO steels were chosen as an experimental material. In both cases, a coarse or columnar grained microstructure, with pronounced intensity of cube and Goss texture components, was achieved during a continuous final annealing. The obtained microstructure leads to a significant decrease of coercivity, measured in DC magnetic field. The coercivity of steel with silicon content 2.4 wt.% decreased from 42 A/m to 17 A/m. Even more remarkable improvement of the soft magnetic properties was observed for the steel with Si 0.6 wt.%, where the coercivity value dropped from 68 A/m to 12.7 A/m.
17
Content available remote

The Model for Luminescence Center Excitation in PbWO_{4}

100%
Millers D., Grigorjeva L., Chernov S., Pankratov V.
Acta Physica Polonica A
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1999
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vol. 95
|
issue 6
971-976
EN
The luminescence and transient absorption of PbWO_{4} crystals were studied. The electron beam (10 ns, E≈270 keV) was used as excitation source. The kinetics of luminescence is complicated - the prompt rise of luminescence intensity is followed by a slow (τ_{r}≈100 ns) rise. The luminescence decay at 80 K is nearly exponential with τ_{d}≈4.0- 4.5 μs. The decay kinetics of transient absorption at 3.5 eV can be described roughly by two exponents with time constants τ_{1}≈100 ns and τ_{2}≈4.0 μs. A common process responsible for absorption relaxation and luminescence rise is suggested. The luminescence center excitation occurs during recombination process via Pb^{2+} excited state formation and subsequent energy transfer to WO_{4}^{2-} group.
18
Content available remote

Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne^{++} Neon Ions

100%
Węgierek P., Billewicz P.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 1
122-124
EN
The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne^{++} neon ions. An analysis of electrical properties recorded at the annealing temperature of T_{a} = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
19
Content available remote

Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H^{+} Ions

100%
Żukowski P., Węgierek P., Billewicz P., Kołtunowicz T., Komarov F.
Acta Physica Polonica A
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2011
|
vol. 120
|
issue 1
125-128
EN
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H^{+} ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ (T_{p}, f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ (T_{p}, f) have also been discussed.
20
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Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics

100%
Węgierek P., Billewicz P.
Acta Physica Polonica A
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2015
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vol. 128
|
issue 5
875-878
EN
The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
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