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Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg

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Ebel R., Spahn W., Ress H., Albert D., Schäfer H., Ehinger M., Faschinger W., Landwehr G.

Acta Physica Polonica A

1996

vol. 90

issue 4

767-772

The heterovalent interface ZnSe/GaAs, despite the small lattice misfit, still poses certain problems. The condition of the substrate surface prior to growth start determines the initial growth conditions, which on the other hand are assumed to be responsible for defect densities. Since Zn, in contrast to Se, hardly binds to GaAs the initial surface during growth start is essentially Se terminated. Therefore the binding of Mg to Se terminated GaAs was investigated. The structural quality of 140 nm thick ZnSe layers on different MgSe coverages were compared to conventionally grown and Te initiated ZnSe epilayers of the same thickness.

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1 Acta Physica Polonica A

1 1996

1 Albert D.

1 Ebel R.

1 Ehinger M.

1 Faschinger W.

1 Landwehr G.

1 Ress H.

1 Schäfer H.

1 Spahn W.

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Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg