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Resonant Magnetotunneling in Double-Barrier Structures

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In this paper we consider the influence of "mass barrier" and elastic scattering processes on the shape of j(V) and j(B) characteristics. Two scattering mechanisms, i.e. Coulombic on ionized impurities and on potential fluctuations in double-barrier structures are considered. The "mass barrier" shifts the whole j(V) characteristic slightly towards lower voltage and makes the resonant energy E_{R} dependent on magnetic field. On the other hand, both considered scattering mechanisms change the shape of j(V) and j(B) characteristics by shifting the oscillation maxima towards lower applied voltage.
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In this paper we present model calculations of the current-voltage characteristics for the CdTe/CdMgTe double barrier structures based on the assumption that the electron effective masses in the barrier and well regions of double barrier structure are different. The main features of the measured I-V characteristics, i.e., the small current peak at low bias and much larger peak at high voltage, are reproduced quite well by the calculated curve. The results of magnetotunneling experiments can be also understood in the frame of the proposed model.
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The existing theory of the resonant tunneling phenomena in double-bar­rier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmis­sion coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quan­tization of the energy spectrum in the accumulation well.
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In this paper the resonant tunneling through the double barrier structure with the parabolic quantum well is studied theoretically. The transmission coefficient for such a structure as a function of applied voltage and the current-voltage characteristics are calculated and compared with those for the double barrier structure with the rectangular quantum well. The conclusion is that the resonant tunneling through parabolic double barrier structure can be used as a method of determination of the conduction band offset of the barrier and the well materials.
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The electron-LO phonon coupling constant for double-barrier quantum well structure was calculated using the Frohlich model of the electron-phonon interaction and assuming coupling of the confined electron with bulk LO phonon mode. Magnitude of the Huang-Rhys factor g and possibility of de­tecting of phonon replicas in the resonant tunneling current are discussed for GaAs-Al_{x}Ga_{1-x}As and CdTe based structures.
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In this paper the transmission coefficient for a double-barrier quantum well (DBQW) structure as a function of applied voltage is calculated, for the first time, using WKB approximation: This approach allows to discuss a dependence of several quantities characteristic of the system (e.g. the value of the coefficient, resonance voltage, charge stored in the well) on the barrier and the well parameters.
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