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Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

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Prażmowska J., Korbutowicz R., Wośko M., Paszkiewicz R., Kovač J., Srnanek R., Tłaczała M.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-123-S-125
EN
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
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