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Dielectric Function of Native Oxide on Ion-Implanted GaAs

100%
Kulik M., Rzodkiewicz W., Gluba Ł., Kobzev A.
Acta Physica Polonica A
|
2013
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vol. 123
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issue 5
956-959
EN
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne^{+}, Al^{+}, Ar^{+}, or In^{+} ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of 1 × 10^{16} cm^{-2} at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
2
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Nuclear and Optical Analyses of MOS Devices

100%
Rzodkiewicz W., Kulik M., Panas A., Kobzev A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
851-853
EN
The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
3
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The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions

100%
Rzodkiewicz W., Kulik M., Pyszniak K., Kobzev A.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-129-S-132
EN
The semi-isolating GaAs (100) samples irradiated with fluence 3 × 10^{15} ions/cm^{2} of In^{+} ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
4
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Composition and Structure of Czochralski Silicon Implanted with H_{2}^{+} and Annealed under Enhanced Hydrostatic Pressure

76%
Kulik M., Kobzev A., Misiuk A., Wierzchowski W., Wieteska K., Bak-Misiuk J.
Acta Physica Polonica A
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2010
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vol. 117
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issue 2
332-335
EN
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H^{+}) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H_{2}^{+}; fluence D = 1.7 × 10^{17} cm^{-2}, energy E = 50 keV (projected range of H_{2}^{+}, R_{p}(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
5
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Characterization of Epitaxial LSMO Films Grown on STO Substrates

64%
Španková M., Štrbík V., Chromik Š., Zheng D., Li J., Machajdík D., Kobzev A., Plecenik T., Sojková M.
Acta Physica Polonica A
|
2017
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vol. 131
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issue 4
848-850
EN
Epitaxial manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) layers, with a thickness of 20-50 nm, are prepared on single crystal (001) SrTiO₃ (STO) substrates by pulsed laser deposition technique. Structural characterization (composition analysis, surface morphology), investigated by the Rutherford backscattering spectroscopy and atomic force microscopy, reveals the growth of stoichiometric LSMO films with a smooth surface (root-mean-square value of 0.21-1.6 nm). The prepared LSMO films possess high Curie temperature ( ≈ 412 K), low room temperature resistivity (1-2 mΩ cm) and maximum of temperature coefficient of resistivity TCR = 2.7% K¯¹ at 321 K.
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