Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 5

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Porous Silicon Based Humidity Sensor

100%
Acta Physica Polonica A
|
2015
|
vol. 127
|
issue 4
1397-1399
EN
Porous silicon (PS) is well known as a photovoltaic material. However, in the last couple of years, research has focused on the use of porous silicon as chemical-biological sensors. This paper discusses the use of PS as an optical humidity sensor. Photo-luminescence (PL) quenching measurements in a controlled humidity atmosphere (mixed Nitrogen gas and water vapor) were performed to test the sensor response towards the water vapor. Surface morphologies of the PS samples were characterized by a scanning electron microscopy (SEM) and structural properties were investigated via Fourier Transform Infrared (FTIR) spectroscopy. It was found that PS surface is very sensitive to the water vapor. The experimental results suggested that PS surface is a promising candidate material to be used as a humidity sensor.
2
Content available remote

Methanol Vapor Sensing by Porous Silicon

51%
EN
In this study, methanol vapor sensing of porous silicon was investigated. The porous silicon samples were anodized in HF based solution and rinsed with ethanol or deionized water after the anodisation. Porous silicon surface is very sensitive for methanol vapor sensing and the sensitivity affect from the rinsing procedure of porous silicon. The experimental results show that porous silicon is a promising candidate material for sensing methanol vapor.
3
Content available remote

Porous Silicon Based Sensor for Organic Vapors

51%
EN
Porous silicon (PS) has been an attractive material for enhancing optical properties of silicon. Its large surface area for sensor applications and compatibility with silicon-based technologies has been a driving force for further technology development. In this study, ability of PS to sense at room temperature organic vapors such as acetone, trichloroethylene and hexane, which are harmful to human health, has been investigated. Electrical (DC) and photo-luminescence (PL) measurements in a controlled atmosphere (nitrogen gas and an organic vapor mix) were performed to test the sensor response towards the organic vapors. It was found that PS surface is very sensitive against these vapors. The experimental results also suggested that PS can be used as a new electro-optical material to sense harmful vapors.
EN
In this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM LiNO_3, KNO_3 and NaNO_3 metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.
EN
Doped zinc(II) oxide (ZnO:Cu) ceramics were prepared from sol-gel derived nanocrystalline powders. Powders were prepared by dissolving zinc and copper acetates in isopropyl alcohol. Ethanolamine was used to enhance the solubility of acetates. Powders were produced by the calcination of the dried gels at 750°C. The crystal size of the undoped powders were uniform and around 50 nm while grain size of Cu doped powders varied between 0.3 and 2 μm. X-ray mapping of the powders showed that Cu was not homogeneously distributed and some particles had higher Cu content. After pressing of the powders, both doped and undoped ceramics were sintered at 1200C for 2 h. Microstructure of the Cu doped ceramics showed that Cu atoms partially dissolved in ZnO matrix and the rest formed a second phase in the grain boundaries. Average grain size of the ZnO:Cu ceramics was around 30 μm. Relative densities of the ceramics increased from 0.695 to 0.857 by Cu doping.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.