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Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

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Jezierski K., Sitarek P., Misiewicz J., Panek M., Ściana B., Korbutowicz R., Tłaczała M.

Acta Physica Polonica A

1995

vol. 88

issue 4

751-754

Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

100%

Prażmowska J., Korbutowicz R., Wośko M., Paszkiewicz R., Kovač J., Srnanek R., Tłaczała M.

Acta Physica Polonica A

2009

vol. 116

issue S

S-123-S-125

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

84%

Boratyński B., Korbutowicz R., Paszkiewicz B., Paszkiewicz R., Pucicki D., Radziewicz D., Ściana B., Tłaczała M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

2004

vol. 52

issue 4

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2 Acta Physica Polonica A

1 Bulletin of the Polish Academy of Sciences: Technical Sciences

1 2009

1 2004

1 1995

3 Korbutowicz R.

3 Tłaczała M.

2 Paszkiewicz R.

2 Ściana B.

1 Boratyński B.

1 Jezierski K.

1 Kovač J.

1 Misiewicz J.

1 Panek M.

1 Paszkiewicz B.

1 Prażmowska J.

1 Pucicki D.

1 Radziewicz D.

1 Sitarek P.

1 Srnanek R.

1 Wośko M.

Search results

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

Advanced technology of AIII-BV and AIII-N structures for microelectronics application