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1
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X-Ray Standing Wave Technique as a Tool in the Study of the Imperfect Crystals

100%
Pełka J., Auleytner J.
Acta Physica Polonica A
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1992
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vol. 82
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issue 1
163-171
EN
The application of the X-ray standing wave (XSW) technique in the case of imperfect crystals meets serious theoretical and interpretational problems. However, well-known advantages of the XSW technique make it especially interesting to the study of the ordering of impurities and of various processes leading to changes in this ordering in various likes of imperfect crystals. In this work we try to answer the question how imperfection of a crystal may influence the changes in fluorescence yield during the XSW measurement. Two likes of imperfect crystals are studied: Si(111) implanted with high energetic Bi^{+} ions, and Zn_{1-x}Co_{x}Se single crystal with natural (111) face. The discussion of obtained results shows that general features of the X-ray standing wave field are conserved despite the considerable imperfections of the crystals. The results seem to support the applicability of the XSW technique to the study of imperfect materials, although some further theoretical effort would be required.
2
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Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

81%
Klinger D., Kret S., Auleytner J., Żymierska D.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
259-264
EN
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
3
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Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

81%
Auleytner J., Skorokhod M., Datsenko L., Khrupa V.
Acta Physica Polonica A
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1996
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vol. 90
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issue 3
541-546
EN
Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
4
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Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods

71%
Żymierska D., Auleytner J., Domagała J., Kobiela T., Duś R.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
289-294
EN
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films.
5
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X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction

71%
Khrupa V., Krasulya S., Machulin V., Datsenko L., Auleytner J.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
981-985
EN
A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.
6
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Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods

71%
Żymierska D., Auleytner J., Domagała J., Szewczyk A., Dmitruk N.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
1025-1030
EN
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
7
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Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods

71%
Pełka J. B., Górecka J., Auleytner J., Domagała J., Bąk-Misiuk J.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
905-910
EN
The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10^{16} I cm^{-2} of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
8
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Integral Structure Perfection Diagnostics of Single Crystals Using Two Wavelengths of X-Ray Spectrum

71%
Datsenko L., Krasulya S., Machulin V., Auleytner J., Khrupa V.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
935-938
EN
A new approach to determination of microdefect structure parameters by means of single crystal diffractometer is proposed. The approach is based on the measurements of the integral reflectivity of a sample for two selected X-ray wavelengths providing with the approximations of thin and thick crystal, respectively.
9
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Investigation of Near Surface Distortions in Si Single Crystals by Means of Spatial Distribution Analysis of Reflected Beams

71%
Khrupa V., Krasulya S., Machulin V., Datsenko L., Auleytner J.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
309-313
EN
A diffractometrical method for quantitative evaluation of structure perfection level in silicon single crystals containing various types of near surface distortions is described. The method is based on the spatial distribution analysis of the reflected intensity in the Bragg case of diffraction. To implement the proposed approach one has to satisfy the condition of the so-called low X-ray absorption because in this case the penetration depth of diffracted radiation exceeds the corresponding value of extinction length. It permits us to obtain a remarkable value of noncoherent reflectivity due to defects placed in deep (on the extension of absorption length) regions of a crystal and therefore, to increase the sensitivity of scattering for low distortions of crystal lattice. Using the method described here the extension of various disturbed layers as well as the level of the static Debye-Waller factor of a crystal can be determined. The effect of surface distortions caused by mechanical treatment and the influence of the following thermal annealing as well as irradiation by high energy protons on the defective structure of the samples were investigated.
10
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X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions

71%
Auleytner J., Khrupa V., Datsenko L., Krasulya S., Skorokhod M.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
301-307
EN
Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
11
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X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method

71%
Auleytner J., Dziuba Z., Górecka J., Pełka J., Regiński K.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
567-574
EN
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.
12
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X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions

71%
Vartanjantz I., Kovalchuk M., Sosphenov A., Auleytner J., Majewski J.
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issue 6
811-817
EN
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount (~20÷30%) of the implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
13
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X-ray Standing Waves and Rutherford backscattering Studies of the Structure of Si Single Crystals Implanted with Fe Ions

71%
Vartanyantz I., Auleytner J., Nowicki L., Kwiatkowski S., Turos A.
Acta Physica Polonica A
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1996
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vol. 89
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issue 5-6
625-633
EN
The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structure of silicon single crystals implanted with 80 keV Fe ions. Both methods were used for the determination of crystal damage and lattice location of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe substitution fraction was determined. The depth profiles of implanted atoms were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice location of implanted atoms is discussed.
14
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Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

62%
Żymierska D., Godwod K., Adamczewska J., Auleytner J., Choiński J., Regiński K.
Acta Physica Polonica A
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2002
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vol. 101
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issue 5
743-750
EN
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10^{14} ions· cm^{-2} dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
15
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X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face

62%
Auleytner J., Domagała J., Gołacki Z., Pawłowska M., Pełka J., Regiński K.
Acta Physica Polonica A
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1993
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vol. 83
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issue 6
759-768
EN
Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.
16
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Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

52%
Datsenko L., Żymierska D., Auleytner J., Klinger D., Machulin V., Klad'ko V., Melnik V., Prokopenko I., Czosnyka T., Choiński J.
Acta Physica Polonica A
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1999
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vol. 96
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issue 1
137-142
EN
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
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