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Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

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Zaborowski M., Grabiec P., Dobrowolski R., Panas A., Skwara K., Szmigiel D., Wzorek M.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-139-S-141
EN
Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several μm by means of photolithography equipment working with μm-scale design rules. Process details influencing a shape of the Si pattern have been discussed. SEM examinations have been presented.
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