Search results

1

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

100%

Boratyński B., Paszkiewicz B., Paszkiewicz R., Tłaczała M.

Acta Physica Polonica A

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2009

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vol. 116

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issue 5

800-805

EN

AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× 10^{12} cm^{-2} and mobility of 1600 cm^{2}/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.

2

SbSI Single Nanowires as Humidity Sensors

88%

Mistewicz K., Nowak M., Szperlich P., Jesionek M., Paszkiewicz R.

Acta Physica Polonica A

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2014

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vol. 126

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issue 5

1113-1114

EN

For the first time influence of humidity on photoconductivity transient characteristics are studied for antimony sulfoiodide (SbSI) single nanowires. While negative photoconductivity is observed for SbSI gel, made up of large quantity of nanowires, only the positive effect occurs for SbSI single nanowires. Photoconductivity current response on switching on and off illumination in moist N_{2} represents so-called hook anomaly.

3

Quantum Effects in Electrical Conductivity and Photoconductivity of Single SbSI Nanowire

76%

Mistewicz K., Nowak M., Wrzalik R., Jesionek M., Szperlich P., Paszkiewicz R., Guiseppi-Elie A.

Acta Physica Polonica A

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2013

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vol. 124

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issue 5

827-829

EN

For the first time current quantization is reported for antimony sulfoiodide (SbSI) nanowires. It has been registered in current responses on electric field switching as well as on illumination on and off. Current steps determined in all experiments have been equal to each other within the experimental error. It has been explained by the quantized change of free carrier concentration in nanowire. Lateral dimensions of SbSI nanowires estimated from quantum steps are comparable with geometrical data reported for the same technology of material preparation.

4

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

76%

Prażmowska J., Korbutowicz R., Wośko M., Paszkiewicz R., Kovač J., Srnanek R., Tłaczała M.

Acta Physica Polonica A

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2009

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vol. 116

|

issue S

S-123-S-125

EN

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

5

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

64%

Boratyński B., Korbutowicz R., Paszkiewicz B., Paszkiewicz R., Pucicki D., Radziewicz D., Ściana B., Tłaczała M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2004

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vol. 52

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issue 4

6

Polarity Related Problems in Growth of GaN Homoepitaxial Layers

52%

Leszczyński M., Prystawko P., Śliwinski A., Suski T., Litwin-Staszewska E., Porowski S., Paszkiewicz R., Tłaczała M., Beaumont B., Gibart P., Barski A., Langer R., Knap W., Frayssinet E.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

427-430

EN

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.

Refine search results

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

SbSI Single Nanowires as Humidity Sensors

Quantum Effects in Electrical Conductivity and Photoconductivity of Single SbSI Nanowire

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

Polarity Related Problems in Growth of GaN Homoepitaxial Layers