Pulsed EPR and ENDOR Study of SiC Nanopowders

• Authors: D. Savchenko
• Languages of publication: EN

Abstracts

EN

In this work field-sweep electron spin echo and pulsed electron nuclear double resonance study of the silicon carbide (SiC) nanoparticles (np-SiC) of different sizes is presented. Nitrogen (N) triplet lines due to the isolated N donor state was observed in np-SiC with grain size d>100 nm. With a decrease of the particle size up to 50 nm the N triplet lines transforms into one single exchange line due to the delocalization of the donor wave function caused by the size confinement effect. Along with N donors the carbon vacancy (V_{C}) located in cubic phase was observed in np-SiC with d < 100 nm. The further decrease of the grain size to d < 50 nm leads to the appearance of the V_{C} located in hexagonal crystalline phase and carbon dangling bonds located in the carbon excess phase of np-SiC. The fact that only N donor center at "k2" quasi-cubic position substituting Si site was observed in the field-sweep electron spin echo and pulsed electron nuclear double resonance spectra of np-SiC was explained by high compensation degree of the samples and the presence of carbon excess in np-SiC. The appearance of the proton electron nuclear double resonance signal in no-SiC with d < 100 nm indicates that the hydrogen retention in np-SiC increases with decreasing of grain size.

Keywords

EN

76.30.-v; 76.70.Dx; 81.07.Wx

Discipline

• 81.07.Wx: Nanopowders
• 76.70.Dx: Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR)
• 76.30.-v: Electron paramagnetic resonance and relaxation(see also 33.35.+r Electron resonance and relaxation in atomic and molecular physics; 87.80.Lg Magnetic and paramagnetic resonance in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1063-1065

Dates

published

2014-11

Contributors

author

D. Savchenko

• Institute of Physics, AS CR, Na Slovance 2, 18221, Prague 8, Czech Republic
• V.E. Lashkaryov Institute of Semiconductor Physics, NASU, 03028, Kiev, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.126.1063